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Patent # Description
US-9,543,844 System and method for a switched-mode power supply
In accordance with an embodiment, a method of operating a switched-mode power supply includes synchronously rectifying a current in a secondary side of the...
US-9,543,838 Phase fault detection in switching power converters
A switching power converter includes a phase operable to deliver a phase current to a load through an inductor. The phase current has an expected sawtooth or...
US-9,543,414 Method of forming a silicon-carbide device with a shielded gate
A silicon-carbide semiconductor substrate having a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface,...
US-9,543,405 Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure
A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches...
US-9,543,398 Semiconductor switching device including charge storage structure
A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn...
US-9,543,389 Semiconductor device with recombination region
A semiconductor device includes a drift zone in a semiconductor body. A charge-carrier transfer region forms a pn junction with the drift zone in the...
US-9,543,386 Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed...
US-9,543,260 Segmented bond pads and methods of fabrication thereof
In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first...
US-9,543,208 Method of singulating semiconductor devices using isolation trenches
In accordance with an embodiment of the present invention, a method for forming a semiconductor device includes forming a device region in a substrate. The...
US-9,543,199 Long-term heat treated integrated circuit arrangements and methods for producing the same
An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment....
US-9,543,157 Method for processing a carrier, a method for operating a plasma processing chamber, and a method for...
According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first...
US-9,541,932 Monitoring current in power switch devices
In one example, a method includes generating, by a main switching element of a device, a load current; generating, by a regulation loop of the device, a sense...
US-9,540,539 Primer composition, method of forming a primer layer on a semiconductor device, and method of encapsulating a...
A primer composition is provided. The primer composition includes at least one bi- or multi-functional benzoxazine compound; and at least one compound including...
US-9,540,226 System and method for a MEMS transducer
According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter...
US-D776,071 Power semiconductor module
US-9,537,447 System and method for a voltage controlled oscillator
In accordance with an embodiment, a voltage controlled oscillator (VCO) includes a VCO core having a plurality of transistors, a bias resistor coupled between...
US-9,537,400 Switching converter with dead time between switching of switches
A device and method for operating a switching power converter are disclosed. In an embodiment a circuit includes a switching power converter having a half...
US-9,537,386 Driver controller with internally calculated average output current
Methods, devices, and integrated circuits are disclosed for a driver controller that internally calculates average output current. In one example, a method...
US-9,537,003 Semiconductor device with charge compensation
A semiconductor device includes a semiconductor body and a source metallization arranged on a first surface of the body. The body includes: a first...
US-9,536,999 Semiconductor device with control structure including buried portions and method of manufacturing
A semiconductor device includes transistor cells with source zones of a first conductivity type and body zones of a second conductivity type. The source and...
US-9,536,960 Semiconductor device comprising a field electrode
A semiconductor device includes a gate electrode adjacent to a body region in a semiconductor substrate. The semiconductor device further includes a field...
US-9,536,958 Semiconductor substrate and a method of manufacturing the same
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein...
US-9,536,953 Method for making a sensor device using a graphene layer
A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The...
US-9,536,918 Integrated circuit with cavity-based electrical insulation of a photodiode
An integrated circuit includes a semiconductor substrate, at least one photodiode, which is formed on a surface of the semiconductor substrate, at least one...
US-9,536,872 Shallow trench isolation area having buried capacitor
A semiconductor chip includes a substrate including a surface, an active transistor region and a substrate contact region formed on the substrate, a shallow...
US-9,536,851 Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for...
A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber...
US-9,536,838 Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers
An embodiment of a method of manufacturing semiconductor wafers comprises forming a notch or a flat in a semiconductor ingot extending along an axial direction....
US-9,536,816 Encapsulated electronic chip device with mounting provision and externally accessible electric connection structure
An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, at least one electric...
US-9,536,740 Increasing the doping efficiency during proton irradiation
A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the...
US-9,536,086 Circuit arrangement, a method for forming a circuit arrangement, and method for integrity checking
A circuit arrangement is provided, the circuit arrangement including a processor; a memory circuit connected to the processor, wherein the processor is...
US-9,536,075 Dynamic resource sharing
Representative implementations of devices and techniques provide dynamic secure sharing of resources. A resource module can be partitioned into a plurality of...
US-9,535,140 System and method for a transformer and a phase-shift network
In accordance with an embodiment, a circuit includes a magnetic transformer having a first winding coupled between a first signal node and a second signal node,...
US-9,534,932 XMR angle sensor arrangement with safety mechanism and method for monitoring the same
An XMR angle sensor arrangement with a safety mechanism comprises an XMR angle sensor having a sensing area for sensing an in-plane magnetic field and for...
US-9,533,874 Sensor module and semiconductor chip
A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface...
US-9,533,473 Chip card substrate and method of forming a chip card substrate
A chip card substrate is provided that includes a first polymer layer including a first polymer material. The chip card substrate further includes an...
US-D775,593 Power semiconductor module
US-9,532,459 Electronic module and method of manufacturing the same
According to an exemplary aspect an electronic module is provided, wherein the electronic module comprises an electronic chip comprising at least one electronic...
US-9,531,451 System and method for high-speed analog beamforming
In accordance with an embodiment, a Radio Frequency (RF) front end system includes a first chip that includes a frequency multiplier coupled to a first input...
US-9,531,369 Circuit arrangement and method for generating a drive signal for a transistor
Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that...
US-9,531,326 Limiting amplifiers
A limiting amplifier includes a multiplicity of cascaded amplifier stages for amplifying an input signal for the amplifier. A further amplifier stage is...
US-9,531,266 Power supply circuitry and adaptive transient control
A control circuitry can be configured to receive an error signal indicating a difference between an output voltage of the power supply and a desired setpoint...
US-9,531,258 Charge pumps with improved latchup characteristics
Some embodiments of the present disclosure relate to improved regulators for charge pumps. Such regulators selectively activate a charge pump based not only on...
US-9,531,035 Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an...
A lithium battery includes a cathode, an anode integrally formed within a silicon substrate, wherein a surface portion of the silicon substrate is patterned to...
US-9,530,884 Method of manufacturing a semiconductor device and semiconductor device
A method of manufacturing a semiconductor device including a transistor comprises forming field plate trenches in a main surface of a semiconductor substrate, a...
US-9,530,877 Enhancement mode III-nitride transistor
According to one embodiment, a III-nitride transistor includes a conduction channel formed between first and second III-nitride bodies, the conduction channel...
US-9,530,850 Semiconductor device with stripe-shaped trench gate structures and gate connector structure
A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate...
US-9,530,847 Semiconductor device with field electrode and field dielectric
A semiconductor device includes a field electrode structure that includes a field electrode and a field dielectric surrounding the field electrode. The field...
US-9,530,774 Semiconductor package for III-nitride transistor stacked with diode
One exemplary disclosed embodiment comprises a two-terminal stacked-die package including a diode, such as a silicon diode, stacked atop a III-nitride...
US-9,530,773 Systems and methods for integrating bootstrap circuit elements in power transistors and other devices
Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments,...
US-9,530,764 Semiconductor arrangement with active drift zone
A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load...
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