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Patent # Description
US-1,021,1325 Semiconductor device including undulated profile of net doping in a drift zone
A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the...
US-1,021,1306 Semiconductor device with diode region and trench gate structure
A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a...
US-1,021,1300 Method of forming a semiconductor device
According to an embodiment of a method of forming a semiconductor device, a semiconductor layer including a first dopant species of a first conductivity type...
US-1,021,1158 Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an...
A power semiconductor module includes a direct copper bonded (DCB) substrate having a ceramic substrate, a first copper metallization bonded to a first main...
US-1,021,1133 Package with interconnections having different melting temperatures
A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a...
US-1,021,1057 Transistor component with reduced short-circuit current
A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type...
US-1,020,9212 Sensor arrangement for particle analysis and a method for particle analysis
According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for...
US-1,020,6286 Embedding into printed circuit board with drilling
In one example, a method includes drilling a cavity into each contact pad of one or more contact pads of a first printed circuit board to form one or more...
US-1,020,6279 Substrate and multiple substrate, and method for producing thereof
A substrate includes a ceramic layer, a metal layer fixed in a planar manner on a surface side of the ceramic layer and a cutout arranged in an edge region of...
US-1,020,6252 Driving several light sources
According to an example, a device is provided for driving several light sources, wherein the device is arranged to sense a supply signal and apply a phase shift...
US-1,020,6231 Tire pressure monitoring system (TPMS) module, system and method of acknowledging data transmissions for TPMS
A tire pressure monitoring system (TPMS) and TPMS sensor module are provide. The TPMS sensor module includes a pressure sensor configured to measure an internal...
US-1,020,5932 Imaging circuits and a method for operating an imaging circuit
An imaging circuit includes a first vertical trench gate and a neighboring second vertical trench gate. The imaging circuit includes a gate control circuit. The...
US-1,020,5541 Integrated RF circuit with phase-noise test capability
An integrated circuit is described herein. According to one or more embodiments, the integrated circuit includes a local oscillator with a voltage-controlled...
US-1,020,5422 System and method for a voltage controlled oscillator
In accordance with an embodiment, a voltage controlled oscillator (VCO) includes a VCO core having a plurality of transistors and a varactor circuit that has a...
US-1,020,5380 Power converter with tank circuit and over-voltage protection
In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control...
US-1,020,5032 Semiconductor structure and method for making same
One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the...
US-1,020,5019 Semiconductor device having a fin at a side of a semiconductor body
One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part...
US-1,020,5016 Method for manufacturing an integrated circuit including a lateral trench transistor and a logic circuit element
A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed...
US-1,020,5015 Reduced gate charge field-effect transistor
In one implementation, a reduced gate charge field-effect transistor (FET) includes a drift region situated over a drain, a body situated over the drift region,...
US-1,020,5011 Method for forming a semiconductor device with implanted chalcogen atoms
Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a...
US-1,020,4995 Normally off HEMT with self aligned gate structure
A heterostructure body with a buffer region, and a barrier region disposed on the buffer region is provided. A gate trench is formed in the barrier region. A...
US-1,020,4993 Power semiconductor device having a field electrode
A power semiconductor device includes: a semiconductor body for conducting a load current between first and second load terminals; source and channel regions...
US-1,020,4873 Breakable substrate for semiconductor die
In some examples, a device includes a substrate and a conductive pad extending through the substrate, wherein the substrate is coupled to the conductive pad at...
US-1,020,4845 Semiconductor chip package having a repeating footprint pattern
A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First...
US-1,020,4804 Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The...
US-1,020,3365 Device testing
A device may include a plurality of cells. Each cell may include a field-effect transistor and a switch configured to selectively connect a second contact of...
US-1,020,3224 Sensor package
A device for detecting an object is suggested comprising a magnetic field sensor, a magnet that is arranged to rotate in a vicinity of the magnetic field...
US-1,020,1087 Discrete device
A device includes a circuit element, a housing for the circuit element and a terminal for coupling the circuit element to an electrical circuit. The terminal...
US-1,020,0801 System and method for a transducer
According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal...
US-1,020,0065 Apparatus and method for correcting at least one bit error within a coded bit sequence
An apparatus for correcting at least one bit error within a coded bit sequence includes an error syndrome generator and a bit error corrector. The error...
US-1,020,0028 Electric assembly including a reverse conducting switching device and a rectifying device
An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells...
US-1,019,9968 Fault handling for alternator control devices
In some examples, an alternator control device includes interface configured to receive a voltage signal from an engine control device, pull-down circuitry, and...
US-1,019,9928 Soft start of switched capacitor converters by reducing voltage provided by initial power switch
Circuits and methods are provided for soft-starting a switched-capacitor converter (SCC), so as to limit inrush current at the start-up of the SCC. This is...
US-1,019,9843 Connect/disconnect module for use with a battery pack
There are disclosed herein various implementations of a connect/disconnect module for use with a battery pack. The connect/disconnect module includes a...
US-1,019,9526 Radiation detector and a method for forming a semiconductor device
A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The...
US-1,019,9514 Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor...
An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically...
US-1,019,9491 Vertical transistor with improved robustness
A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A...
US-1,019,9490 Semiconductor device with a guard structure and corresponding methods of manufacture
A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the...
US-1,019,9468 Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices
A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer....
US-1,019,9456 Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
A method of forming a semiconductor device is provided. The device includes a semiconductor substrate having a main surface and a rear surface vertically spaced...
US-1,019,9372 Monolithically integrated chip including active electrical components and passive electrical components with...
An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first...
US-1,019,9367 Semiconductor device
A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor device further includes a transistor structure...
US-1,019,9334 Digital circuit and method for manufacturing a digital circuit
According to one embodiment, a method for manufacturing a digital circuit is described comprising forming a modified RS master latch with an output for...
US-1,019,9332 Method of manufacturing a semiconductor device comprising a support element and semiconductor device comprising...
A semiconductor device includes a power transistor in a semiconductor substrate portion, where the semiconductor substrate portion includes a central portion...
US-1,019,9330 Alignment mark arrangement, semiconductor workpiece, and method for aligning a wafer
In various embodiments, an alignment mark arrangement may include a plurality of alignment marks disposed next to each other in a row, wherein at least one of...
US-1,019,9291 Sensor for a semiconductor device
A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift...
US-1,019,9255 Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck
According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more...
US-1,019,9238 Semiconductor module cooling system
A cooling apparatus includes a discrete module and a plastic housing. The discrete module includes a semiconductor die encapsulated by a mold compound, a...
US-1,019,9216 Semiconductor wafer and method
In an embodiment, a method includes treating an edge region of a wafer including a substrate having an upper surface and one or more epitaxial Group III nitride...
US-1,019,8684 Smart card module, smart card, and method for producing a smart card module
A smart card module includes a substrate having a first main surface and a second main surface, which is opposite the first main surface. The substrate has a...
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