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Patent # Description
US-1,028,3957 Supplying load having inrush-current behaviour
Devices and methods are provided relating to supplying a load having an inrush-current behavior, e.g. charging of a capacitance e.g. at power up of a circuit. A...
US-1,028,3634 Power MOSFET semiconductor
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of...
US-1,028,3447 Power semiconductor module with partially coated power terminals and method of manufacturing thereof
A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the...
US-1,028,3432 Molded package with chip carrier comprising brazed electrically conductive layers
A method of manufacturing a package, wherein the method comprises a forming a chip carrier by covering a thermally conductive and electrically insulating core...
US-1,028,2655 Chip card module, chip card, chip card arrangement, method of forming a chip card module, and method of forming...
A chip card module is provided. The chip card module may include a carrier having a first side and an opposite second side, a chip arranged over the carrier,...
US-1,028,1528 Enhanced protection, diagnosis, and control of power distribution and control units
Systems, devices, methods, and techniques are disclosed for performing calibrated measurements of current through switches in an electronic control unit. In one...
US-1,028,1517 Semiconductor chip with fracture detection
A semiconductor chip includes a substrate, an integrated circuit, an indentation of the substrate, a conductor track, and also a crossover between the...
US-1,028,1298 Wheel localization from reference magnetic field and angular rotation information in TPMS application
Embodiments may provide a system, a wheel localizer, a wheel localization device, or methods for locating a position of at least one wheel out of a plurality of...
US-1,027,8084 RF receiver with built-in self-test function
A radar sensor includes a mixer configured to receive an radio frequency (RF) input signal to down-convert the RF input signal into a base-band or intermediate...
US-1,027,7219 Electronic switching and reverse polarity protection circuit
In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The...
US-1,027,7123 Method and apparatus for setting control loop parameters of a voltage regulator controller
A method is provided for configuring a controller for a voltage regulator system having an output filter response set by an inductance (L) and a capacitance...
US-1,027,7111 Output overvoltage protection for converters
According to an example, a step down converter includes switching circuit configured to control a switching output in order to generate an output voltage on a...
US-1,027,6708 Reverse-blocking IGBT having a reverse-blocking edge termination structure
A reverse-blocking IGBT (insulated gate bipolar transistor) includes a plurality of IGBT cells disposed in a device region of a semiconductor substrate, a...
US-1,027,6706 Gated diode in a press-fit housing and an alternator assembly having a gated diode arranged in a load path
A gated diode in a press-fit housing includes a base configured to be press-fit into an opening of a diode carrier plate and including a pedestal portion with a...
US-1,027,6681 Double gate transistor device and method of operating
In accordance with an embodiment, a method include switching on a transistor device by generating a first conducting channel in a body region by driving a first...
US-1,027,6670 Semiconductor devices and methods for forming semiconductor devices
A semiconductor device includes an array of needle-shaped trenches extending into a semiconductor substrate. The semiconductor device further includes a gate...
US-1,027,6669 Sloped field plate and contact structures for semiconductor devices and methods of manufacturing thereof
A semiconductor device includes a base layer, a dielectric layer over the base layer, an opening extending through the dielectric layer and to a main surface of...
US-1,027,6656 Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure
Epitaxy troughs are formed in a semiconductor substrate, wherein a matrix section of the semiconductor substrate laterally separates the epitaxy troughs and...
US-1,027,6655 Semiconductor devices and methods for forming a semiconductor device
A semiconductor device includes a plurality of compensation regions of a first conductivity type arranged in a semiconductor substrate. The semiconductor device...
US-1,027,6494 One time programmable memory cell and memory array
Memory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable...
US-1,027,6362 Method for processing a semiconductor region and an electronic device
According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may...
US-1,027,6256 Data reduction using analog memory
A device may include a first analog memory device to sample an analog input during a first time window of a sampling window, store a first analog signal based...
US-1,027,6222 Method for accessing a memory and memory access circuit
In accordance with one embodiment, a method for accessing a memory is provided, including carrying out a first access to the memory and charging, for a memory...
US-1,027,4507 Stray-field robust, twist-insensitive magnetic speed sensors
A magnetic sensor module includes a magnetic sensor having an in-plane axis and an out-of-plane axis, and including a differential pair of sensor elements...
US-1,027,3597 Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device
In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon...
US-1,026,6389 Forming an offset in an interdigitated capacitor of a microelectromechanical systems (MEMS) device
A method for forming a MEMS device may include performing a silicon-on-nothing process to form a cavity in a monocrystalline silicon substrate at a first depth...
US-1,026,3518 System and method for switched power supply with delay measurement
According to an embodiment, a method of operating a switching power supply includes applying a periodic switching signal to a first switch that is coupled to an...
US-1,026,3516 Cascaded voltage converter with inter-stage magnetic power coupling
Circuits and methods are provided for using a switching voltage converter to convert an input voltage into an output voltage. The voltage converter includes...
US-1,026,3419 Transient voltage protection circuits, devices, and methods
A transient voltage protection circuit includes a first input/output pad, a second input/output pad, and a trigger circuit coupled between the first...
US-1,026,3412 System and method for desaturation detection
In accordance with an embodiment, a method of operating a control circuit includes generating a threshold value based on a drive signal of an external power...
US-1,026,3101 Semiconductor device with deep diffusion region
A method of processing a semiconductor device, comprising: providing a semiconductor body having dopants of a first conductivity type; forming at least one...
US-1,026,3086 Semiconductor device with first and second field electrode structures
A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field...
US-1,026,2993 Semiconductor devices and a method for forming a semiconductor device
A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a...
US-1,026,2959 Semiconductor devices and methods of forming thereof
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major...
US-1,026,2889 Integrated circuit and method of forming an integrated circuit
An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench...
US-1,026,1899 Method, device and system for data processing using dedicated mapping between logical and physical addresses
A method for data processing including mapping between a logical address and a physical address of a memory, wherein the memory comprises several pages, wherein...
US-1,026,1137 Magnetic sensor
A sensor including a sensing device and a processor. The sensing device can be configured to sense one or more environmental conditions, such as one or more...
US-1,025,9701 Comb MEMS device and method of making a comb MEMS device
A MEMS device and a method to manufacture a MEMS device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming...
US-1,025,9274 Pressure sensitive foil, a tire pressure sensor module, a tire, a method and a computer program for obtaining...
Embodiments provide a pressure sensitive foil, a tire pressure sensor module, a tire, a method and a computer program for determining information related to...
US-1,025,7937 Device for electrically coupling a plurality of semiconductor device layers by a common conductive layer
An assembly includes a first laminate electronic component and a second laminate electronic component. The first laminate electronic component includes a first...
US-1,025,6814 Enhanced semiconductor switch
An first embodiment relates to a device comprising: a first semiconductor switch; an integrated sensor for determining a current that passes the first...
US-1,025,6812 Half bridge coupled resonant gate drivers
In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy;...
US-1,025,6744 Controller device with adaptive synchronous rectification
In an example, a controller device for a resonant converter includes processing circuitry configured to output a first switching signal and a second switching...
US-1,025,6729 Switched-capacitor converter with interleaved half bridge
Circuits and methods are provided for voltage conversion within a switched-capacitor converter (SCC). The SCC includes multiple switch stages cascaded together....
US-1,025,6632 Power factor correction using power factor correction circuitry from deactivated circuit
A method of operating a power supply including first and second power converters connected to a load and a power factor correction circuit connected to the...
US-1,025,6630 Controller device for power electronics circuit
In some examples, a controller device is configured to control power electronics circuitry and includes a high-voltage (HV) pin, a power supply (VCC) pin, a...
US-1,025,6325 Radiation-hardened power semiconductor devices and methods of forming them
According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an...
US-1,025,6299 SOI island in a power semiconductor device
A power semiconductor device includes a semiconductor-on-insulator island having a semiconductor region and an insulation structure, the insulation structure...
US-1,025,6149 Semiconductor wafer dicing crack prevention using chip peripheral trenches
A semiconductor base substrate having a substantially planar growth surface is provided. A first type III-V semiconductor layer is epitaxially grown on the...
US-1,025,6119 Method of manufacturing a semiconductor power package
A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place...
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