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Patent # Description
US-9,571,108 Multi-output phase detector
Representative implementations of devices and techniques provide a multi-bit binary representation of a phase difference between two signals. The multi-bit...
US-9,571,087 Method of operating a reverse conducting IGBT
According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an...
US-9,570,994 Adjustable blanking time for overload protection for switch-mode power supplies
A blanking time for a switch-mode power supply controller includes a first blanking time interval and a second blanking time interval. During the first blanking...
US-9,570,980 System and method for switched power supply current sampling
According to an embodiment, a method of operating a switching power supply includes applying a periodic switching signal to a first switch that is coupled to an...
US-9,570,979 Voltage regulator with power stage sleep modes
A power stage of a voltage regulator includes a first switch for connecting a load to a supply voltage in a first switching state of the power stage, a second...
US-9,570,974 High-frequency switching circuit
A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the...
US-9,570,676 Method for manufacturing the magnetic field sensor module
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator...
US-9,570,659 Semiconductor device for emitting frequency-adjusted infrared light
A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter...
US-9,570,607 Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
US-9,570,596 Super junction semiconductor device having a compensation structure
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a...
US-9,570,577 Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
A semiconductor device includes a semiconductor mesa that includes at least one body zone forming first pn junctions with source zones and a second pn junction...
US-9,570,576 Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic...
US-9,570,566 Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor...
A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first...
US-9,570,565 Field effect power transistor metalization having a comb structure with contact fingers
A metalization of a field effect power transistor having lateral semiconductor layers on an insulator substrate or an intrinsically conducting or doped...
US-9,570,553 Semiconductor chip with integrated series resistances
A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a...
US-9,570,542 Semiconductor device including a vertical edge termination structure and method of manufacturing
A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface...
US-9,570,441 Semiconductor device with thermally grown oxide layer between field and gate electrode and method of manufacturing
A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill...
US-9,570,438 Avalanche-rugged quasi-vertical HEMT
A semiconductor device includes a semiconductor body including first and second lateral surfaces. A first device region includes a drift region of a first...
US-9,570,433 Semiconductor device and method for manufacturing a semiconductor device
A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a...
US-9,570,419 Method of thinning and packaging a semiconductor chip
A semiconductor wafer and a plurality of semiconductor dies are provided. The wafer and the dies each include first electrically conductive terminals arranged...
US-9,570,379 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
In one implementation, a power semiconductor package includes a power transistor having a first power electrode and a gate electrode on its bottom surface, and...
US-9,570,352 Method of dicing a wafer and semiconductor chip
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the...
US-9,570,099 Magnetoresistive devices and methods for manufacturing magnetoresistive devices
A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of...
US-9,569,384 Conditional links for direct memory access controllers
Some embodiments relate to a Direct Memory Access (DMA) controller. The DMA controller includes a bus controller having a system bus interface and configured to...
US-9,569,354 System and method to emulate an electrically erasable programmable read-only memory
The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and...
US-9,568,541 Testing of semiconductor packages with integrated antennas
A semiconductor package includes a semiconductor die, an antenna embedded in insulating material contacting a first main side of the semiconductor die and...
US-9,568,447 Fluid sensor chip and method for manufacturing the same
A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including...
US-9,567,211 Micromechanical semiconductor sensing device
Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a...
US-9,566,836 Apparatus and method for determining a state parameter of an object to be monitored
An apparatus for determining a driving situation of a vehicle to be monitored is disclosed. The apparatus comprises a provider configured to provide measurement...
US-9,566,834 System and method for determining the mileage and wear of a tire
A system includes an acceleration sensor for detecting a centrifugal acceleration, and a processing unit, which is coupled to the acceleration sensor and which...
US-9,565,768 Semiconductor package with integrated output inductor on a printed circuit board
A semiconductor package includes a semiconductor die comprising a control transistor and a sync transistor, an integrated output inductor comprising a winding 1...
US-9,565,488 Micro-electro-mechanical system devices
In various embodiments, a micro-electro-mechanical system device is provided. The micro-electro-mechanical system device may include a carrier, a particle...
US-9,564,843 Reverse rotation of a motor configured for operation in a forward direction
There are disclosed herein various implementations of a method and a system enabling operation of a motor in reverse. Such a method includes applying a first...
US-9,564,810 Switched mode power supply
A switching power converter includes an inductor coupled to a terminal operably supplied with an input voltage. A semiconductor switch is coupled to the...
US-9,564,771 Cable compensation by zero-crossing compensation current and resistor
Methods, devices, and circuits are disclosed delivering a first level of output voltage to a rechargeable battery from a battery charger, the rechargeable...
US-9,564,578 Semiconductor package with integrated magnetic field sensor
A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as...
US-9,564,550 Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a...
According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least...
US-9,564,524 Semiconductor device and method
A semiconductor device includes a device region including a compound semiconductor material and a non-device region at least partially surrounding the device...
US-9,564,498 Transistor with elevated drain termination
According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also...
US-9,564,495 Semiconductor device with a semiconductor body containing hydrogen-related donors
A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of...
US-9,564,492 Group III-V device with a selectively modified impurity concentration
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body...
US-9,564,449 Semiconductor device and method of forming a semiconductor device
A semiconductor device is provided, which may include: a well of a first conductivity type located within a substrate of a second conductivity type; a well...
US-9,564,425 Integrated transistor structure having a power transistor and a bipolar transistor
An integrated transistor structure includes an epitaxial layer on a semiconductor substrate, a power transistor formed in a first region of the epitaxial layer...
US-9,564,423 Power package with integrated magnetic field sensor
A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a...
US-9,564,403 Magnetic shielding of perpendicular STT-MRAM
A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A...
US-9,564,389 Semiconductor package with integrated die paddles for power stage
In one implementation, a semiconductor package includes a first conductive carrier including a first die paddle of the semiconductor package, and a control...
US-9,564,384 Plastic cooler for semiconductor modules
A cooling apparatus includes a plurality of discrete modules and a plastic housing. Each module includes a semiconductor die encapsulated by a mold compound, a...
US-9,563,766 Device and accessory pairing
A device authenticates accessories by detecting that an accessory is attached to the device, determining a unique identification (ID) for the accessory,...
US-9,562,954 Maximization of target signal and elimination of backbias component for a differential upright position sensor
Embodiments relate to sensor device configurations. In one embodiment, a sensor device comprises a bias magnet, a field sensor die, a first set of one or more...
US-9,561,953 Method of forming a protective coating for a packaged semiconductor device
A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first...
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