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Patent # Description
US-8,905,310 Contactless data reception using a cancellation circuit
A contactless device including a transmission antenna configured to transmit a transmission signal; a pickup antenna configured to detect a field generated by a...
US-8,905,309 Reader application device
A communication system including a reader application device having a reader application, and a reader configured to operate under control of the reader...
US-8,904,083 Method and apparatus for storing data in solid state memory
A method and a storage device for storing data in a flash memory drive are disclosed. In order to increase data throughput, the drive includes a cache memory...
US-8,901,996 Configurable system for cancellation of the mean value of a modulated signal
Some embodiments of the invention relate to a DC offset correction circuit comprising a feedback loop having a DAC controlled by a reconfigurable ADC, which...
US-8,901,979 Storage circuit
In accordance with an embodiment, a description is given of a storage circuit including an input stage configured to provide a value to be stored, a storage...
US-8,901,921 Angle measurement system for determining an angular position of a rotating shaft
Some aspects of the present disclosure relate to techniques for measuring an angular position of a rotating shaft. As will be described in greater detail below,...
US-8,901,908 Methods and apparatus for DC-DC conversion using digitally controlled adaptive pulse frequency modulation
A method and apparatus for regulating voltage comprising calculating a first PFM on time and a second PFM on time and selecting one the PFM on times according...
US-8,901,739 Embedded chip package, a chip package, and a method for manufacturing an embedded chip package
An embedded chip package is provided. The embedded chip package includes a plurality of chips; encapsulation material embedding the plurality of chips; at least...
US-8,901,737 Integrated circuit arrangement with an auxiliary indentation, particularly with aligning marks
An integrated circuit arrangement is disclosed having a wiring indentation and an auxiliary indentation in a dielectric layer. The wiring indentation contains a...
US-8,901,717 Semiconductor device and manufacturing method
A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift...
US-8,901,715 Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking
A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the...
US-8,901,661 Semiconductor device with first and second field-effect structures and an integrated circuit including the...
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a...
US-8,901,647 Semiconductor device including first and second semiconductor elements
A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor...
US-8,901,642 Charge compensation semiconductor device
A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first...
US-8,901,624 Schottky diodes having metal gate electrodes and methods of formation thereof
In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first...
US-8,901,623 Super junction semiconductor device with overcompensation zones
According to an embodiment, a super junction semiconductor device may be manufactured by introducing impurities of a first impurity type into an exposed surface...
US-8,900,985 Self-doped ohmic contacts for compound semiconductor devices
A compound semiconductor device is manufactured by forming an III-nitride compound semiconductor device structure on a silicon-containing semiconductor...
US-8,900,715 Semiconductor device
A semiconductor device includes a wafer having a first surface opposite a second surface, and at least one laser irradiated region between the first and second...
US-8,589,775 Error tolerant flip-flops
One embodiment of the present invention relates to an error tolerant memory circuit having a low hardware overhead that can tolerate both single volatile soft...
US-8,587,361 RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch...
An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the...
US-8,587,352 Fractional-N phase locked loop
A frequency division circuit with a rational-valued division ratio includes a frequency divider with a selectable integer-valued division ratio supplied with an...
US-8,587,297 Integrated circuit including sensor having injection molded magnetic material
An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor.
US-8,587,116 Semiconductor module comprising an insert
A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom...
US-8,587,110 Semiconductor module having a semiconductor chip stack and method
A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with...
US-8,587,059 Transistor arrangement with a MOSFET
A semiconductor arrangement includes a MOSFET having a source region, a drift region and a drain region of a first conductivity type, a body region of a second...
US-8,587,055 Integrated circuit using a superjunction semiconductor device
In an embodiment, an apparatus includes a source region, a gate region and a drain region supported by a substrate, and a drift region including a plurality of...
US-8,587,033 Monolithically integrated HEMT and current protection device
A transistor device includes a high electron mobility field effect transistor (HEMT) and a protection device. The HEMT has a source, a drain and a gate. The...
US-8,587,025 Method for forming laterally varying doping concentrations and a semiconductor device
A method for forming a laterally varying n-type doping concentration is provided. The method includes providing a semiconductor wafer with a first surface, a...
US-8,586,993 Normally-off compound semiconductor tunnel transistor
Disclosed herein are embodiments of a normally-off compound semiconductor tunnel field effect transistor having a drive current above 100 mA per mm of gate...
US-8,586,472 Conductive lines and pads and method of manufacturing thereof
A semiconductor device and method are disclosed. The semiconductor device includes a substrate having a first region and a second region and an insulating layer...
US-8,586,420 Power semiconductor arrangement and method for producing a power semiconductor arrangement
In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are...
US-8,583,710 Identification circuit and method for generating an identification bit using physical unclonable functions
An embodiment of the present invention is an identification circuit installed on an integrated circuit for generating an identification bit, comprising a first...
US-8,581,656 Transmission gate and control circuit for transmission gate inputs
A transmission gate includes first and second transmission path terminals, a series connection of first and second field effect transistors (FETs), and a...
US-8,581,405 Integrated circuit having a semiconductor substrate with barrier layer
An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic...
US-8,581,371 Connection element for a semiconductor component and method for producing the same
A connection element is arranged on a connection area of a semiconductor component. The connection element includes at least one bonding wire portion fixed on...
US-8,581,342 Semiconductor device with field electrode and method
A semiconductor device with a field electrode and method. One embodiment provides a controllable semiconductor device including a control electrode for...
US-8,580,687 Semiconductor structure and method for making same
One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the...
US-8,580,612 Chip assembly
A method of manufacturing an array of semiconductor devices comprises providing a first carrier having multiple chip alignment regions. Multiple chips are...
US-8,577,004 Predictive contact information representation
A probability that one or more contacts may be selected is determined. The probability that one or more contact may be selected may be determined based on one...
US-8,576,183 Devices and methods for controlling both LED and touch sense elements via a single IC package pin
Devices and methods for minimizing a number of I/O pins needed to control LED and touch sense operations are described and disclosed herein. In an embodiment, a...
US-8,575,920 Magneto-resistive magnetic field sensor
A system includes a magnet, a first magneto-resistive sensing element, and a second magneto-resistive sensing element. The magnet is configured to provide a...
US-8,575,723 Detection circuit and method for detecting damage to a semiconductor chip
A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the...
US-8,575,037 Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and...
Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor...
US-8,575,026 Method of protecting sidewall surfaces of a semiconductor substrate
One or more embodiments may include a method of making a semiconductor structure, comprising: forming a first opening partially through a semiconductor...
US-8,574,966 Semiconductor device having a semiconductor chip, and method for the production thereof
A semiconductor device having a semiconductor chip having an active surface with flip-chip contacts and a passive surface is disclosed. The flip-chip contacts...
US-8,573,045 Indirect tire pressure monitoring systems and methods
Embodiments relate to indirect tire pressure monitoring systems (TPMSs) and methods that utilize anti-lock braking system (ABS) signals. In embodiments,...
US-8,569,881 Semiconductor device
A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The...
US-8,569,865 Integrated circuit and production method
An integrated circuit and a production method is disclosed. One embodiment forms reverse-current complexes in a semiconductor well, so that the charge carriers,...
US-8,569,842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor...
A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between...
US-8,569,820 Capacitor having a plurality of parallel conductive members
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive...
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