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Patent # Description
US-9,735,141 Compound semiconductor transistor with gate overvoltage protection
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound...
US-9,735,126 Solder alloys and arrangements
A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the...
US-9,735,086 Power semiconductor module having a two-part housing
A power semiconductor module includes a substrate having a first side for being arranged to face a heat sink and for being thermally conductively connected to...
US-9,735,078 Device including multiple semiconductor chips and multiple carriers
A device includes a first semiconductor chip that is arranged over a first carrier and includes a first electrical contact. The device further includes a second...
US-9,734,445 Electronic document with two antennas
In various embodiments, a circuit arrangement is provided, including a first antenna tuned to a first frequency range, a second antenna tuned to a second...
US-9,733,365 Gamma ray detector and method of detecting gamma rays
In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma...
US-9,733,280 Balancing an eddy current effect and a skin effect on a magnetic sensor using die paddle notches
A magnetic current sensor may include a first sensing element, a second sensing element, and a die paddle. The die paddle may include a first edge and a second...
US-9,733,279 Magnetic field current sensors
Embodiments related to magnetic current sensors, systems and methods. In an embodiment, a magnetic current sensor integrated in an integrated circuit (IC) and...
US-9,733,107 XMR angle sensors
Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range...
US-9,728,529 Semiconductor device with electrostatic discharge protection structure
A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device...
US-9,728,512 Electro static discharge clamping device
Electrostatic discharge clamp devices are described. In one embodiment, the semiconductor device includes a first transistor, the first transistor including a...
US-9,728,395 Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of...
A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the...
US-9,723,716 Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one...
US-9,722,659 Frequency ramp generation
A method for generating a digital frequency ramp signal including a sequence of frequency ramps is disclosed herein. In accordance with one embodiment of the...
US-9,721,161 Dynamic adjustment of imaging parameters
Representative implementations of devices and techniques provide adjustable parameters for imaging devices and systems. Dynamic adjustments to one or more...
US-9,718,678 Package arrangement, a package, and a method of manufacturing a package arrangement
According to various embodiments, a package arrangement may include: a first encapsulation material; at least one electronic circuit at least partially embedded...
US-9,714,988 Hall effect sensor with graphene detection layer
A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called "full 3-d" Hall sensor,...
US-9,708,182 Methods for producing a cavity within a semiconductor substrate
A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor...
US-9,708,180 MEMS device with polymer layer, system of a MEMS device with a polymer layer, method of making a MEMS device...
A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS...
US-9,704,913 Manufacturing of an imager device and imager device
Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are...
US-9,704,750 Method for forming a semiconductor device and a semiconductor device
A method of forming a semiconductor device and a semiconductor device are provided. The method includes providing a wafer stack including a carrier wafer...
US-9,698,833 Voltage standing wave radio measurement and tuning systems and methods
A standing wave ratio detection arrangement is disclosed. The arrangement includes a standing wave ratio detector and a controller. The standing wave ratio...
US-9,698,683 Method and apparatus for controller optimization of a switching voltage regulator
Control loop coefficients for a digital voltage regulator controller are determined by determining PID (proportional-integral-derivative) coefficients that...
US-9,698,083 Three-dimensional stack of leaded package and electronic member
An electronic device comprising a package comprising an encapsulated electronic chip, at least one at least partially exposed electrically conductive carrier...
US-9,692,623 Receiver, transmitter, method for determining a value encoded in a PWM signal, and method for transmitting a...
A receiver includes a receiver circuit to receive a pulse width modulated signal, which assumes a first signal level, a second signal level and an intermediate...
US-9,691,885 Method for manufacturing a transistor
A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least...
US-9,689,770 Selfcalibration of capacitive pressure sensors with electrostatic forces
A pressure sensor calibration system comprises one or more pressures sensors for calibrating sensor parameters based on a membrane deflection or a membrane...
US-9,688,060 Method for producing a composite and a power semiconductor module
A composite is produced by providing a first and a second joining partner, a connecting means, a sealing means, a reactor having a pressure chamber, and a...
US-9,685,967 Chopper stabilized sigma delta ADC
A .SIGMA..DELTA. ADC includes a forward path, a feedback path, and offset compensation circuitry. The forward path is configured to convert an analog input...
US-9,685,923 Communication over a voltage isolation barrier
A transmitter circuit comprises: an input, an encoder circuit, and a transmitter. During operation, the transmitter circuit receives an input signal. The...
US-9,685,506 IGBT having an inter-trench superjunction structure
There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes...
US-9,683,306 Method of forming a composite material and apparatus for forming a composite material
A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension...
US-9,680,005 Semiconductor device having an active trench and a body trench
A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main...
US-9,680,004 Power MOSFET with seperate gate and field plate trenches
A power MOSFET includes a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main...
US-9,679,963 Semiconductor structure and a method for processing a carrier
According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed...
US-9,679,892 Method of manufacturing a reverse blocking semiconductor device
A reverse blocking semiconductor device is manufactured by introducing impurities of a first conductivity type into a semiconductor substrate of the first...
US-9,679,856 System and method for a microfabricated fracture test structure
According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a...
US-9,679,167 Chip and method for detecting an attack on a chip
According to one embodiment, a chip is described comprising a substrate; an energy source configured to provide energy to the substrate; an energy receiver...
US-9,678,168 Sensor system including multiple comparators
A system including a sensor circuit and comparison circuitry. The sensor circuit is configured to provide a sensed signal. The comparison circuitry is...
US-9,672,182 High-speed serial ring
Methods and systems for transferring a high-speed data signal between more than two electronic devices within a system comprising a master device and a...
US-9,670,059 Sensor structure for sensing pressure waves and ambient pressure
In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive...
US-9,670,057 Sensor device and method for making thereof
A sensor device may include an electronic device that has at least one integrated circuit device and a MEMS sensor that are each monolithically integrated with...
US-9,668,056 Sound transducer structure and method for manufacturing a sound transducer structure
A sound transducer structure includes a membrane, a counter electrode, and a plurality of elevations. The membrane includes a first main surface, made of a...
US-9,667,409 Sensor that transmits signals responsive to a request signal and receives information
A sensor comprises a transmitter to transmit signals over a communication path, the sensor further capable to receive signals from the communication path,...
US-9,667,357 Millimeter-wave transmitter on a chip, method of calibration thereof and millimeter-wave power sensor on a chip
The present invention relates to a millimeter-wave transmitter on a chip comprising at least one transmit path coupleable to an oscillator, and an on-chip power...
US-9,667,243 High speed tracking current sense system
A tracking current sensing system is described. The system may include a first electrical sensing element configured to receive a first electrical signal and a...
US-9,666,705 Contact structures for compound semiconductor devices
A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel...
US-9,666,696 Method of manufacturing a vertical junction field effect transistor
A method of manufacturing a vertical junction field effect transistor (JFET) includes forming a drain in a semiconductor substrate, forming a compound...
US-9,666,663 Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
First and second cell trench structures extend from a first surface into a semiconductor substrate. The first cell trench structure includes a first buried...
US-9,666,557 Small footprint semiconductor package
A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a...
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