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Patent # Description
US-9,577,852 Common-mode suppressor based on differential transmission line
A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long...
US-9,577,663 Bandwidth extension of oversampled analog-to-digital converters by means of gain boosting
A digitized system operates to receive one or more analog signals from a sensor or other component and convert the analog signals to one or more digital...
US-9,577,647 Systems and methods for temperature compensated oscillators having low noise
A voltage controlled oscillator arrangement is disclosed. The arrangement includes a voltage controlled oscillator and a bypass component. The voltage...
US-9,577,629 Circuit for an active diode and method for operating an active diode
Embodiments of the invention relate to a circuit for an active diode, a method for operating an active diode, and, based thereon, an integrated active diode...
US-9,577,622 Phase interpolator
Phase interpolators are provided where an adjustment current is added to currents from a plurality of switchable current sources, for example to reduce an...
US-9,577,612 Power converter with split voltage supply
A power converter driver that is supplied with two different voltages.
US-9,577,522 Pre-filtering in a power supply control circuit
A hybrid power supply circuit includes a digital circuit, a digital-to-analog converter circuit, and an analog compensator circuit (analog control circuit)....
US-9,577,513 Method for operating a power factor correction circuit
A method for operating a power factor correction circuit is provided which may include the steps of providing a plurality of N switched-mode converter circuits...
US-9,577,080 Power semiconductor device
A power semiconductor device includes a semiconductor substrate layer of a first conductive type which has a lower part semiconductor layer of a second...
US-9,577,079 Tunnel field effect transistors
Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first...
US-9,577,073 Method of forming a silicon-carbide device with a shielded gate
A silicon-carbide semiconductor substrate having a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface,...
US-9,577,039 Transistor structure with reduced parasitic side wall characteristics
A MOS transistor structure for matched operation in weak-inversion or sub-threshold range (e.g. input-pair of operational amplifier, comparator, and/or...
US-9,577,034 Compensation devices
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for...
US-9,576,944 Semiconductor devices with transistor cells and thermoresistive element
A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a...
US-9,576,935 Method for fabricating a semiconductor package and semiconductor package
A method for fabricating semiconductor packages includes providing a first substrate having an aperture, providing a first semiconductor chip, connecting the...
US-9,576,887 Semiconductor package including conductive carrier coupled power switches
In one implementation, a semiconductor package including conductive carrier coupled power switches includes a first vertical FET in a first active die having a...
US-9,576,875 Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip...
A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole...
US-9,576,872 Semiconductor devices and methods for manufacturing semiconductor devices
A method includes arranging multiple semiconductor chips over a first carrier and depositing a first material layer over surfaces of the multiple semiconductor...
US-9,576,867 Device comprising a ductile layer and method of making the same
Device comprising a ductile layer, a method for making a component comprising a ductile layer and a method for testing a component are disclosed. An embodiment...
US-9,576,844 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer...
US-9,575,912 Service request interrupt router with shared arbitration unit
A service request interrupt router having Interrupt Control Units (ICUs); and an arbitration unit configured to be shared by the ICUs to arbitrate among Service...
US-9,575,113 Insulated-gate bipolar transistor collector-emitter saturation voltage measurement
In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a...
US-9,575,100 Circuit arrangement and method for determining a current in a circuit arrangement
A circuit arrangement including a rectifier circuit and a current determining circuit. The rectifier circuit is configured to rectify an alternating signal into...
US-9,574,958 Torque sensor
An embodiment discloses a sensor arrangement comprising disc shaped structure with a plurality of magnetic elements which are at least provided on end faces of...
US-9,572,207 Dimming range extension
Representative implementations of devices and techniques provide a dimming arrangement for a variable load, such as a lamp. The dimming arrangement is coupled...
US-9,571,315 Sensor systems and methods utilizing band pass filter tuning
A communication system having a configurable bandpass filter is disclosed. The system includes a bandpass filter and a bandpass controller. The bandpass filter...
US-9,571,108 Multi-output phase detector
Representative implementations of devices and techniques provide a multi-bit binary representation of a phase difference between two signals. The multi-bit...
US-9,571,087 Method of operating a reverse conducting IGBT
According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an...
US-9,570,994 Adjustable blanking time for overload protection for switch-mode power supplies
A blanking time for a switch-mode power supply controller includes a first blanking time interval and a second blanking time interval. During the first blanking...
US-9,570,980 System and method for switched power supply current sampling
According to an embodiment, a method of operating a switching power supply includes applying a periodic switching signal to a first switch that is coupled to an...
US-9,570,979 Voltage regulator with power stage sleep modes
A power stage of a voltage regulator includes a first switch for connecting a load to a supply voltage in a first switching state of the power stage, a second...
US-9,570,974 High-frequency switching circuit
A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the...
US-9,570,676 Method for manufacturing the magnetic field sensor module
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator...
US-9,570,659 Semiconductor device for emitting frequency-adjusted infrared light
A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter...
US-9,570,607 Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
US-9,570,596 Super junction semiconductor device having a compensation structure
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a...
US-9,570,577 Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
A semiconductor device includes a semiconductor mesa that includes at least one body zone forming first pn junctions with source zones and a second pn junction...
US-9,570,576 Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic...
US-9,570,566 Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor...
A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first...
US-9,570,565 Field effect power transistor metalization having a comb structure with contact fingers
A metalization of a field effect power transistor having lateral semiconductor layers on an insulator substrate or an intrinsically conducting or doped...
US-9,570,553 Semiconductor chip with integrated series resistances
A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a...
US-9,570,542 Semiconductor device including a vertical edge termination structure and method of manufacturing
A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface...
US-9,570,441 Semiconductor device with thermally grown oxide layer between field and gate electrode and method of manufacturing
A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill...
US-9,570,438 Avalanche-rugged quasi-vertical HEMT
A semiconductor device includes a semiconductor body including first and second lateral surfaces. A first device region includes a drift region of a first...
US-9,570,433 Semiconductor device and method for manufacturing a semiconductor device
A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a...
US-9,570,419 Method of thinning and packaging a semiconductor chip
A semiconductor wafer and a plurality of semiconductor dies are provided. The wafer and the dies each include first electrically conductive terminals arranged...
US-9,570,379 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
In one implementation, a power semiconductor package includes a power transistor having a first power electrode and a gate electrode on its bottom surface, and...
US-9,570,352 Method of dicing a wafer and semiconductor chip
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the...
US-9,570,099 Magnetoresistive devices and methods for manufacturing magnetoresistive devices
A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of...
US-9,569,384 Conditional links for direct memory access controllers
Some embodiments relate to a Direct Memory Access (DMA) controller. The DMA controller includes a bus controller having a system bus interface and configured to...
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