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Common-mode suppressor based on differential transmission line
A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long...
Bandwidth extension of oversampled analog-to-digital converters by means
of gain boosting
A digitized system operates to receive one or more analog signals from a sensor or other component and convert the analog signals to one or more digital...
Systems and methods for temperature compensated oscillators having low
A voltage controlled oscillator arrangement is disclosed. The arrangement includes a voltage controlled oscillator and a bypass component. The voltage...
Circuit for an active diode and method for operating an active diode
Embodiments of the invention relate to a circuit for an active diode, a method for operating an active diode, and, based thereon, an integrated active diode...
Phase interpolators are provided where an adjustment current is added to currents from a plurality of switchable current sources, for example to reduce an...
Power converter with split voltage supply
A power converter driver that is supplied with two different voltages.
Pre-filtering in a power supply control circuit
A hybrid power supply circuit includes a digital circuit, a digital-to-analog converter circuit, and an analog compensator circuit (analog control circuit)....
Method for operating a power factor correction circuit
A method for operating a power factor correction circuit is provided which may include the steps of providing a plurality of N switched-mode converter circuits...
Power semiconductor device
A power semiconductor device includes a semiconductor substrate layer of a first conductive type which has a lower part semiconductor layer of a second...
Tunnel field effect transistors
Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first...
Method of forming a silicon-carbide device with a shielded gate
A silicon-carbide semiconductor substrate having a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface,...
Transistor structure with reduced parasitic side wall characteristics
A MOS transistor structure for matched operation in weak-inversion or sub-threshold range (e.g. input-pair of operational amplifier, comparator, and/or...
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for...
Semiconductor devices with transistor cells and thermoresistive element
A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a...
Method for fabricating a semiconductor package and semiconductor package
A method for fabricating semiconductor packages includes providing a first substrate having an aperture, providing a first semiconductor chip, connecting the...
Semiconductor package including conductive carrier coupled power switches
In one implementation, a semiconductor package including conductive carrier coupled power switches includes a first vertical FET in a first active die having a...
Methods for manufacturing a chip arrangement, methods for manufacturing a
chip package, a chip package and chip...
A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole...
Semiconductor devices and methods for manufacturing semiconductor devices
A method includes arranging multiple semiconductor chips over a first carrier and depositing a first material layer over surfaces of the multiple semiconductor...
Device comprising a ductile layer and method of making the same
Device comprising a ductile layer, a method for making a component comprising a ductile layer and a method for testing a component are disclosed. An embodiment...
Method for manufacturing a composite wafer having a graphite core, and
composite wafer having a graphite core
A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer...
Service request interrupt router with shared arbitration unit
A service request interrupt router having Interrupt Control Units (ICUs); and an arbitration unit configured to be shared by the ICUs to arbitrate among Service...
Insulated-gate bipolar transistor collector-emitter saturation voltage
In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a...
Circuit arrangement and method for determining a current in a circuit
A circuit arrangement including a rectifier circuit and a current determining circuit. The rectifier circuit is configured to rectify an alternating signal into...
An embodiment discloses a sensor arrangement comprising disc shaped structure with a plurality of magnetic elements which are at least provided on end faces of...
Dimming range extension
Representative implementations of devices and techniques provide a dimming arrangement for a variable load, such as a lamp. The dimming arrangement is coupled...
Sensor systems and methods utilizing band pass filter tuning
A communication system having a configurable bandpass filter is disclosed. The system includes a bandpass filter and a bandpass controller. The bandpass filter...
Multi-output phase detector
Representative implementations of devices and techniques provide a multi-bit binary representation of a phase difference between two signals. The multi-bit...
Method of operating a reverse conducting IGBT
According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an...
Adjustable blanking time for overload protection for switch-mode power
A blanking time for a switch-mode power supply controller includes a first blanking time interval and a second blanking time interval. During the first blanking...
System and method for switched power supply current sampling
According to an embodiment, a method of operating a switching power supply includes applying a periodic switching signal to a first switch that is coupled to an...
Voltage regulator with power stage sleep modes
A power stage of a voltage regulator includes a first switch for connecting a load to a supply voltage in a first switching state of the power stage, a second...
High-frequency switching circuit
A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the...
Method for manufacturing the magnetic field sensor module
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator...
Semiconductor device for emitting frequency-adjusted infrared light
A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter...
Field-effect semiconductor device having alternating n-type and p-type
pillar regions arranged in an active area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
Super junction semiconductor device having a compensation structure
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a...
Semiconductor device and insulated gate bipolar transistor with source
zones formed in semiconductor mesas
A semiconductor device includes a semiconductor mesa that includes at least one body zone forming first pn junctions with source zones and a second pn junction...
Method for forming a semiconductor device having insulating parts or
layers formed via anodic oxidation
A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic...
Semiconductor device including a trench at least partially filled with a
conductive material in a semiconductor...
A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first...
Field effect power transistor metalization having a comb structure with
A metalization of a field effect power transistor having lateral semiconductor layers on an insulator substrate or an intrinsically conducting or doped...
Semiconductor chip with integrated series resistances
A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a...
Semiconductor device including a vertical edge termination structure and
method of manufacturing
A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface...
Semiconductor device with thermally grown oxide layer between field and
gate electrode and method of manufacturing
A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill...
Avalanche-rugged quasi-vertical HEMT
A semiconductor device includes a semiconductor body including first and second lateral surfaces. A first device region includes a drift region of a first...
Semiconductor device and method for manufacturing a semiconductor device
A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a...
Method of thinning and packaging a semiconductor chip
A semiconductor wafer and a plurality of semiconductor dies are provided. The wafer and the dies each include first electrically conductive terminals arranged...
Power semiconductor package with integrated heat spreader and partially
etched conductive carrier
In one implementation, a power semiconductor package includes a power transistor having a first power electrode and a gate electrode on its bottom surface, and...
Method of dicing a wafer and semiconductor chip
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the...
Magnetoresistive devices and methods for manufacturing magnetoresistive
A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of...
Conditional links for direct memory access controllers
Some embodiments relate to a Direct Memory Access (DMA) controller. The DMA controller includes a bus controller having a system bus interface and configured to...