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Patent # Description
US-9,287,373 Semiconductor device
A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate...
US-9,287,354 Semiconductor component and method for producing it
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a...
US-9,287,238 Leadless semiconductor package with optical inspection feature
A semiconductor package includes a plurality of bond pads having a first side and a second side opposing the first side, a coating covering the first side of...
US-9,287,206 Method of fabricating a semiconductor device with encapsulant
A method of fabricating a semiconductor device and semiconductor device is provided. The method provides a first layer. The first layer includes through-holes....
US-9,287,165 Semiconductor device and method for producing the same
A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high...
US-9,285,439 Vertical hall sensor with series-connected hall effect regions
A vertical Hall sensor includes first and second vertical Hall effect regions formed in a semiconductor substrate and of the same doping type, with first and...
US-9,285,399 Switching regulator cycle-by-cycle current estimation
A switching regulator includes an output phase having a high-side transistor and a low-side transistor operable to switch on and off at different periods...
US-9,284,184 MEMS device and method of making a MEMS device
A MEMS device and a method of making a MEMS device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a...
US-9,283,864 Circuit, electric power train and method for charging a battery
A circuit is provided, including a battery, an omnipolar switch, a switching element, a DC-intermediate circuit and a current supplying circuit. The omnipolar...
US-9,281,813 Half bridge flyback and forward
A circuit includes a transformer having a first winding and a second winding, an input connected to a first terminal of the first winding, a first power...
US-9,281,802 System and method for a switchable capacitance
In accordance with an embodiment, a switchable capacitance circuit includes a plurality of capacitance-switch cells that each has a first semiconductor...
US-9,281,746 System and method for a diagnostic circuit
According to an embodiment, a diagnostic circuit is configured to be coupled to an output terminal of a switching circuit and to a sense terminal of a sense...
US-9,281,744 System and method for a programmable voltage source
In accordance with an embodiment, a method of operating a charge pump includes providing a first programmable voltage to a plurality of clock generators having...
US-9,281,413 Enhancement mode device
An enhancement mode device includes a floating gate structure. The floating gate structure includes a first bottom dielectric layer, a second bottom dielectric...
US-9,281,392 Charge compensation structure and manufacturing therefor
A charge-compensation semiconductor device includes a semiconductor body including a first surface, a second surface arranged opposite to the first surface, an...
US-9,281,388 Composite semiconductor device with a SOI substrate having an integrated diode
There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a...
US-9,281,387 High voltage durability III-nitride device
A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first...
US-9,281,360 Semiconductor device with a shielding structure
A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor...
US-9,281,359 Semiconductor device comprising contact trenches
One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device...
US-9,281,306 Multi-transistor exposed conductive clip for semiconductor packages
One exemplary disclosed embodiment comprises a semiconductor package including multiple transistors coupled to an exposed conductive clip. A driver integrated...
US-9,281,260 Semiconductor packages and methods of forming the same
In one embodiment, a method of fabricating a semiconductor package includes forming a first plurality of die openings on a laminate substrate. The laminate...
US-9,281,032 Memory timing circuit
A memory circuit including a memory cell configured to provide a charge, voltage, or current to an associated bit-line; a sense amplifier configured to sense...
US-9,280,501 Compatible network node, in particular, for can bus systems
A network node is provided, including a device, in particular, an error detection logic, which is deactivated if it is detected that a signal according to a...
US-9,279,883 Method and device for radar applications
A device for radar applications includes a computing engine, a radar acquisition unit connected to the computing engine, a timer unit connected to the computing...
US-9,279,864 Sensor device and sensor arrangement
A vertical Hall sensor structure according to an embodiment includes a Hall effect region arranged between a first interface and a second interface of the Hall...
US-9,279,856 Die, chip, method for driving a die or a chip and method for manufacturing a die or a chip
In various embodiments, a die is provided. The die may include a physical unclonable function circuit configured to provide an output signal, wherein the output...
US-9,277,606 Propagation delay compensation for floating buck light emitting diode (LED) driver
Devices, systems, and methods for improving a current spread of a light emitting diode (LED). Some aspects including a peak detector and a variable gain...
US-9,276,604 Feed forward double-sampling modulator
Representative implementations of devices and techniques provide analog to digital conversion of an analog input. A multistage modulator using a feed-forward...
US-9,276,135 Junction field effect transistor with vertical PN junction
An embodiment relates to a JFET with a channel region and a gate region forming a pn junction. Between a source region and a drain region in a semiconductor...
US-9,276,107 Semiconductor device having buried gate electrode structures
A semiconductor device includes first and second gate electrode structures and a connection plug. The first gate electrode structure is buried in a...
US-9,276,097 Gate overvoltage protection for compound semiconductor transistors
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound...
US-9,275,986 Transistor and tunable inductance
According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source...
US-9,275,973 Electronic device and method for fabricating an electronic device
An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main...
US-9,275,944 Semiconductor package with multi-level die block
A semiconductor package includes a block having a first side, a second side opposite the first side and a recessed region extending from the second side toward...
US-9,275,926 Power module with cooling structure on bonding substrate for cooling an attached semiconductor chip
According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive...
US-9,275,916 Removable indicator structure in electronic chips of a common substrate for process adjustment
A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate is provided, wherein the method comprises...
US-9,275,895 Semiconductor component and methods for producing a semiconductor component
A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor...
US-9,275,878 Metal redistribution layer for molded substrates
Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of...
US-9,275,862 Compensation devices
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for...
US-9,275,324 Booster antenna structure for a chip card
In various embodiments, a booster antenna structure for a chip card is provided, wherein the booster antenna structure may include a booster antenna; and an...
US-9,274,998 Drive train control
Various techniques relating to drive train control are disclosed. In an embodiment, in a first mode of operation communication between a controller and a...
US-9,274,183 Vertical hall device comprising first and second contact interconnections
A vertical Hall device includes a Hall effect region formed in a substrate and a sequence of at least six contacts arranged in or at a surface of the Hall...
US-9,274,163 Turret handlers and methods of operations thereof
In one embodiment, a method of testing a semiconductor component includes loading a plurality of semiconductor components into a main turret of a turret...
US-9,270,248 Impedance matching network with improved quality factor and method for matching an impedance
An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt...
US-9,269,961 Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an...
A lithium battery includes a cathode, an anode including a component made of silicon, a separator element disposed between the cathode and the anode, an...
US-9,269,807 Semiconductor device and method of making the same
A semiconductor device includes a drift region in a first region of a semiconductor body. The drift region includes dopants of a first conductivity type. A...
US-9,269,769 Semiconductor component including a short-circuit structure
A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped...
US-9,269,713 Semiconductor device and method for producing the same
A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face,...
US-9,269,711 Semiconductor device
A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges...
US-9,269,685 Integrated circuit package and packaging methods
An integrated circuit package includes a package module formed from successive build-up layers which define circuit interconnections, a cavity formed on a...
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