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Patent # Description
US-9,230,880 Electronic device and method for fabricating an electronic device
An electronic device includes a semiconductor chip including an electrode, a substrate element and a contact element connecting the electrode to the substrate...
US-9,230,870 Integrated test circuit and method for manufacturing an integrated test circuit
An integrated test circuit, including a plurality of test structure elements, wherein each test structure element includes at least a supply line and a test...
US-9,227,843 Methods of manufacturing a MEMS device having a backplate with elongated protrusions
MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate...
US-9,219,487 Frequency ramp generation in PLL based RF frontend
An RF transceiver circuit is disclosed herein. In accordance with one example of the disclosure the RF transceiver circuit includes a phase-locked-loop (PLL)...
US-9,219,149 Semiconductor device with vertical transistor channels and a compensation structure
A semiconductor device includes transistor cells with vertical channels perpendicular to a first surface of a semiconductor portion. A buried compensation...
US-9,219,144 Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a...
A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor...
US-9,219,143 Semiconductor device and super junction semiconductor device having semiconductor mesas
A semiconductor device includes semiconductor mesas of a first conductivity type extending between a first surface and a bottom plane of a semiconductor...
US-9,219,121 Semiconductor component having a transition region
A semiconductor component is disclosed. One embodiment provides a semiconductor component including a semiconductor body having a cell array region with...
US-9,219,117 Semiconductor structure and a method for processing a carrier
According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed...
US-9,219,063 Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor
Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel...
US-9,219,058 Efficient high voltage switching circuits and monolithic integration of same
A high voltage switching circuit includes first and second group III-V transistors, the second group III-V transistor having a greater breakdown voltage than...
US-9,219,049 Compound structure and method for forming a compound structure
A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a...
US-9,219,034 Semiconductor module having deflecting conductive layer over a spacer structure
A module includes a semiconductor chip and a conductive layer arranged over the semiconductor chip. The module also includes a spacer structure arranged to...
US-9,219,031 Chip arrangement, and method for forming a chip arrangement
A chip arrangement may include: a chip including a plurality of electrical nets, wherein each electrical net includes at least one bonding pad; and a plurality...
US-9,219,025 Molded flip-clip semiconductor package
A molded flip-chip semiconductor package includes a leadframe having opposing first and second main surfaces, a first metallization on the first main surface, a...
US-9,219,020 Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices
A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the...
US-9,219,011 Separation of chips on a substrate
Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is...
US-9,218,991 Ion implantation at high temperature surface equilibrium conditions
There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method...
US-9,218,960 Method of manufacturing a semiconductor device including a stress relief layer
A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material...
US-9,218,958 Method for forming a semiconductor device
A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at...
US-9,218,756 Test system for semiconductor array
In accordance with an embodiment, an integrated circuit includes a plurality of devices on the integrated circuit. Each device includes a driving circuit, an...
US-9,214,978 Circuit and method for a circuit
A circuit comprises a transmitter to provide a transmit signal. The circuit also comprises a coupler element to receive the transmit signal at an input port, to...
US-9,214,911 System and method for adjusting the sensitivity of a capacitive signal source
In accordance with an embodiment, a system for amplifying a signal provided by a capacitive signal source includes an impedance converter having an input node...
US-9,214,872 Method for actuating the switching transistors of a rectifier
The invention relates to a method for actuating the switching transistors of a rectifier which is provided for converting the phase voltages that are provided...
US-9,214,521 Reverse conducting IGBT
A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the...
US-9,214,442 Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip
In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged...
US-9,214,432 Explosion-protected semiconductor module
A semiconductor module has a carrier, a semiconductor chip mounted on the carrier, a bond wire, a module housing, and a first sound absorber. The module housing...
US-9,214,424 Method for producing a conductor line
A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is...
US-9,213,350 Impedance transformation with transistor circuits
In one implementation, an apparatus may include a first negative channel metal oxide semiconductor (NMOS) transistor circuit coupled to a first voltage source,...
US-9,212,045 Micro mechanical structure and method for fabricating the same
A micro mechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure includes a functional region...
US-9,210,516 Packaged MEMS device and method of calibrating a packaged MEMS device
A packaged MEMS device and a method of calibrating a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device comprises a carrier, a MEMS...
US-9,210,015 Edge-based communication
Methods, devices and systems are disclosed where to generate a pulse a data line is actively driven to a first voltage followed by actively driving the data...
US-9,209,793 Bootstrap circuitry for an IGBT
A bootstrap circuit provides a gate-emitter voltage to the high-side IGBT of a half-bridge IGBT arrangement. The bootstrap circuit includes a buck-boost circuit...
US-9,209,778 Microelectromechanical resonators
Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator...
US-9,209,680 Circuit for providing negative voltages with selectable charge pump or buck-boost operating mode
Circuits, arrangements and systems may provide for configuring a portion of an integrated circuit to receive an electrical component, and configuring the...
US-9,209,497 Sensor module and battery elements
A sensor module includes an enclosure adapted to hermetically seal an opening or a hole on the outer surface of a casing or packaging, a sensor element and a...
US-9,209,318 Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer
A vertical junction field effect transistor (JFET) includes a drain, a source, a gate, a drift region, and a body diode. The source, gate, drift region, and...
US-9,209,292 Charge compensation semiconductor devices
A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active...
US-9,209,281 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective...
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more...
US-9,209,248 Power transistor
A power transistor includes a number of transistor cells. Each transistor cell includes a source region, a drain region, a body region and a gate electrode....
US-9,209,242 Semiconductor device with an edge termination structure having a closed vertical trench
A semiconductor device includes a semiconductor die having an outer edge and an active area defining a main horizontal surface and being spaced apart from the...
US-9,209,152 Molding material and method for packaging semiconductor chips
A method and apparatus for packaging a semiconductor chip is presented. A semiconductor device includes a chip, a lead, and an encapsulant. The encapsulant...
US-9,209,116 Semiconductor device package having asymmetric chip mounting area and lead widths
A semiconductor device package includes a solid metal base with a top surface and an electrically conductive chip mounting area on the top surface. First and...
US-9,209,109 IGBT with emitter electrode electrically connected with an impurity zone
An IGBT includes a semiconductor portion with IGBT cells. Each IGBT cell includes a source zone of a first conductivity type, a body zone of a second,...
US-9,209,088 Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes...
US-9,209,080 Semiconductor device comprising a protective structure on a chip backside and method of producing the same
A semiconductor device includes a semiconductor chip including a first main face and a second main face. The second main face is the backside of the...
US-9,209,027 Adjusting the charge carrier lifetime in a bipolar semiconductor device
A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to...
US-9,207,693 Method and apparatus for compensating PVT variations
A method and device for compensating PVT (process, voltage temperature) variations are disclosed. In some embodiments an integrated circuit includes a buffer...
US-9,207,683 Flow meter device and method of operation
A flow meter device is coupled to at least one sensor that measures a flow speed and provides status signals from which the flow speed can be determined. The...
US-9,207,292 Magnetoresistive device and method for manufacturing the same
A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer...
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