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Sensor module and battery elements
A sensor module includes an enclosure adapted to hermetically seal an opening or a hole on the outer surface of a casing or packaging, a sensor element and a...
Vertical JFET with body diode and device regions disposed in a single
compound epitaxial layer
A vertical junction field effect transistor (JFET) includes a drain, a source, a gate, a drift region, and a body diode. The source, gate, drift region, and...
Charge compensation semiconductor devices
A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active...
Method of manufacturing a device by locally heating one or more
metallization layers and by means of selective...
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more...
A power transistor includes a number of transistor cells. Each transistor cell includes a source region, a drain region, a body region and a gate electrode....
Semiconductor device with an edge termination structure having a closed
A semiconductor device includes a semiconductor die having an outer edge and an active area defining a main horizontal surface and being spaced apart from the...
Molding material and method for packaging semiconductor chips
A method and apparatus for packaging a semiconductor chip is presented. A semiconductor device includes a chip, a lead, and an encapsulant. The encapsulant...
Semiconductor device package having asymmetric chip mounting area and lead
A semiconductor device package includes a solid metal base with a top surface and an electrically conductive chip mounting area on the top surface. First and...
IGBT with emitter electrode electrically connected with an impurity zone
An IGBT includes a semiconductor portion with IGBT cells. Each IGBT cell includes a source zone of a first conductivity type, a body zone of a second,...
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes...
Semiconductor device comprising a protective structure on a chip backside
and method of producing the same
A semiconductor device includes a semiconductor chip including a first main face and a second main face. The second main face is the backside of the...
Adjusting the charge carrier lifetime in a bipolar semiconductor device
A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to...
Method and apparatus for compensating PVT variations
A method and device for compensating PVT (process, voltage temperature) variations are disclosed. In some embodiments an integrated circuit includes a buffer...
Flow meter device and method of operation
A flow meter device is coupled to at least one sensor that measures a flow speed and provides status signals from which the flow speed can be determined. The...
Magnetoresistive device and method for manufacturing the same
A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer...
XMR angle sensors
Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and...
Auto-calibration of acceleration sensors
Representative implementations of devices and techniques provide calibration for a sensor. The calibration includes adapting an output signal of the sensor...
Integrated IC package
An Integrated Circuit (IC) package comprises a package comprising a first set of pads having a pinout that is compatible with a chip core of a product family. A...
System and method for an RF receiver
In accordance with an embodiment, a radio-frequency (RF) front-end for a radio configured to receive an RF signal at a first frequency includes an antenna port...
Circuitry and method for correcting 3-bit errors containing adjacent 2-bit
A circuitry is proposed for the correction of errors in a possibly erroneous binary word v'=v'.sub.1, . . . , v'.sub.n relative to a codeword v=v.sub.1, . . . ,...
Integrated magnetic field sensor-controlled switch devices
Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an...
Chopped circuit with AC and DC ripple error feedback loops
The present disclosure relate to a sensor system having a low offset error. In some embodiments, the sensor system comprises a sensor configured to generate a...
Buck-boost converter with active output voltage discharge
Methods, devices, and integrated circuits are disclosed for applying an active output voltage discharge for a buck-boost converter. One example is directed to a...
Lateral power semiconductor device and method for manufacturing a lateral
power semiconductor device
A lateral power semiconductor device includes a semiconductor body having a first surface and a second opposite surface, a first main electrode, a second main...
Power MOSFET semiconductor
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of...
Semiconductor device with a thick bottom field plate trench having a
single dielectric and angled sidewalls
Disclosed is a power device, such as a power MOSFET device and a method for fabricating same. The device includes a field plate trench. The field plate trench...
Semiconductor component with dynamic behavior
One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor...
Integrated circuit arrangements
An integrated circuit arrangement is provided, including a transistor including a gate region; and a wavelength conversion element, wherein the wavelength...
Method for processing a carrier, a carrier, and a split gate field effect
According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier...
Cascode circuit integration of group III-N and group IV devices
In an exemplary implementation, an integrated assembly includes a printed circuit board, and a depletion mode III-Nitride transistor die and a group IV...
Methods for producing a bond and a semiconductor module
A pressure chamber has first and second housing elements and first and second chamber regions. The pressure chamber is loaded with a first part, a second part,...
Semiconductor devices and structures
Devices, semiconductor structures and methods are provided, where a substrate is around a semiconductor device is biased via a resistive element.
Semiconductor devices and methods of producing these
A method includes applying a reinforcing wafer to a semiconductor wafer, thereby forming a composite wafer. Further the method includes dividing the composite...
Method for defining a separating structure within a semiconductor device
A method includes depositing a material layer over a semiconductor substrate and using a first mask in a first exposure/patterning process to pattern the...
Fabrication of III-nitride layers
A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method.
System and methods using a multiplexed reference for sense amplifiers
A sense amplifier system includes a first path, a second path, a memory cell, a first reference cell, a second reference cell, and a switch component. The...
Methods and devices are disclosed where a voltage on a wordline is changed from a first voltage to a second voltage via a plurality of intermediate voltages.
Transponder inlay for a document for personal identification and a method
for producing a transponder inlay
A transponder inlay for a document for personal identification having a transponder substrate, for arrangement of a transponder unit comprising a chip and an...
Method and system for timeout monitoring
Embodiments relate to systems and methods for timeout monitoring of concurrent commands or parallel communication channels comprising assigning or de-assigning...
System and method for a power supply
In accordance with an embodiment, a method of controlling a power supply node includes measuring a voltage of the power supply node, determining a first current...
Magnetic sensor device and a method for fabricating the same
A magnetic sensor device includes a plurality of electrical wires, a magnetic sensor chip, and a magnet. The magnet is formed from a material composition of a...
Device for determination of gas concentration
A device can be used for establishing gas concentrations in an examination volume. A radiation source is configured to generate an electromagnetic beam. A beam...
Magnetic out-of-axis angle sensing principle
The present disclosure relates to a magnetic angle sensor module having first magnetic polewheel comprising a first number of poles and a second magnetic...
Transmitter circuit and method for operating thereof
In various embodiments a transmitter circuit may include a first circuit configured to transmit data in a first data transmission mode, a second circuit...
Circuit arrangement and method for bidirectional data transmission
A transformer arrangement for signal transmission is provided, the transformer arrangement having at least one transformer with a primary coil and a secondary...
Voltage sensing in a voltage converter
A method for sensing an output voltage in a voltage converter includes at least one switching element and a transformer. A voltage is sampled across an...
Electrostatic discharge clamping devices with tracing circuitry
Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.
Method of manufacturing a semiconductor device having a buried field plate
A method of manufacturing a semiconductor device includes forming a first compound semiconductor material on a semiconductor substrate and forming a second...
Delamination and crack prevention in III-nitride wafers
In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. The method includes forming at...
Capacitor and method of forming a capacitor
A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially...