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Patent # Description
US-9,257,424 Semiconductor device
A semiconductor device is provided that includes a composite semiconductor body including a high voltage depletion-mode transistor and a low voltage...
US-9,257,342 Methods of singulating substrates to form semiconductor devices using dummy material
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within...
US-9,257,285 Ion source devices and methods
An ion source includes a chamber defining an interior cavity for ionization, an electron beam source at a first end of the interior cavity, an inlet for...
US-9,254,996 Vertical pressure sensitive structure
Embodiments related to pressure sensitive structures are described and depicted.
US-9,253,569 System and method for a cancelation circuit
In accordance with an embodiment, a cancelation circuit includes a current mirror and a low pass filter. The current mirror includes an input terminal...
US-9,252,354 Vertical hall device with highly conductive opposite face node for electrically connecting first and second...
Vertical Hall device with highly conductive node for electrically connecting first and second Hall effect regions. A vertical Hall device comprises a first Hall...
US-9,252,292 Semiconductor device and a method for forming a semiconductor device
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first doping region arranged at a main surface of the...
US-9,252,263 Multiple semiconductor device trenches per cell pitch
A semiconductor device includes a plurality of field plate trenches formed in a semiconductor substrate, a plurality of gate trenches formed in the...
US-9,252,257 III-nitride semiconductor device with reduced electric field between gate and drain
A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to...
US-9,252,256 III-nitride semiconductor device with reduced electric field
A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to...
US-9,252,251 Semiconductor component with a space saving edge structure
A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component...
US-9,252,140 Semiconductor chip and semiconductor arrangement
One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer...
US-9,252,089 Universal lead frame for flat no-leads packages
A universal lead frame for semiconductor packages includes a solid lead frame sheet comprising an electrically conductive material and a plurality of columns...
US-9,252,063 Extended contact area for leadframe strip testing
A leadframe strip includes a plurality of unit leadframes connected to a periphery of the leadframe strip, each unit leadframe having a die paddle, a plurality...
US-9,252,045 Method for manufacturing a composite wafer having a graphite core
A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate...
US-9,251,934 Method for manufacturing a plurality of nanowires
A method for manufacturing a plurality of nanowires, the method including: providing a carrier comprising an exposed surface of a material to be processed and...
US-9,251,864 System and method for providing voltage supply protection in a memory device
The invention relates to an electronic memory system, and more specifically, to a system for providing voltage supply protection in a memory device, and a...
US-9,251,303 Method and apparatus for use in design of a system
A method is disclosed for use in design of a system, the system to include a plurality of sources contributing to a variable system effect. The method includes...
US-9,251,120 Wheel localizer, wheel localization device, system, method and computer program for locating a position of a wheel
Embodiments can provide a system, a wheel localizer, a wheel localization device, a method or a computer program for locating a position of wheel. The system...
US-9,251,098 Apparatus and method for accessing an encrypted memory portion
An apparatus for accessing an encrypted memory portion of a memory is provided. The apparatus includes a plurality of signature generators, wherein each...
US-9,250,293 Capacitive test device and method for capacitive testing a component
A system and a method for capacitive testing a component (including a packaged component) are disclosed. An embodiment of a test head comprises a holding unit...
US-9,249,014 Packaged nano-structured component and method of making a packaged nano-structured component
An assembled component and a method for assembling a component are disclosed. In one embodiment the assembled component includes a component carrier, an...
US-9,248,709 RFID-tag, a TPMS device, a tire, a receiver device and a method for providing information related to...
Embodiments relate to a Radio Frequency IDentification (RFID)-tag, a Tire Pressure Monitoring System (TPMS) device, a tire, a receiver device and a method for...
US-9,248,466 Application of fluids to substrates
Various embodiments relate to application of a fluid to a substrate. The fluid is locally heated, for example, to obtain a desired thickness profile.
US-D748,595 Power semiconductor module
US-9,246,483 High-frequency switching circuit
A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the...
US-9,246,410 Integrated power semiconductor component, production method and chopper circuit comprising integrated...
A monolithically integrated power semiconductor component includes a semiconductor body having first and second regions each extending from a first surface of...
US-9,245,985 IGBT with buried emitter electrode
There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a...
US-9,245,984 Reverse blocking semiconductor device, semiconductor device with local emitter efficiency modification and...
A reverse blocking semiconductor device includes a base region of a first conductivity type and a body region of a second, complementary conductivity type,...
US-9,245,944 Silicon carbide device and a method for manufacturing a silicon carbide device
A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination...
US-9,245,943 Semiconductor body with strained monocrystalline region
A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant...
US-9,245,888 Reverse polarity protection for n-substrate high-side switches
A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a...
US-9,245,868 Method for manufacturing a chip package
A method for manufacturing a chip package is provided, the method including: forming a layer arrangement over a carrier; arranging a chip including one or more...
US-9,245,837 Radio frequency power device
An electronic RF power device includes a transistor chip, a device input terminal and a device output terminal. Further, the electronic RF power device includes...
US-9,245,811 Method for postdoping a semiconductor wafer
A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and...
US-9,245,801 Crack stop barrier and method of manufacturing thereof
A wafer is disclosed. The wafer comprises a plurality of chips and a plurality of kerfs. A kerf of the plurality of kerfs separates one chip from another chip....
US-9,245,760 Methods of forming epitaxial layers on a porous semiconductor layer
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first...
US-9,245,684 Method for manufacturing a transformer device on a glass substrate
A method for manufacturing a transformer device includes providing a glass substrate having a first side and a second side arranged opposite the first side,...
US-9,244,485 High frequency oscillator with spread spectrum clock generation
Devices, systems, and methods for spread spectrum clock generation are disclosed. The devices, systems, and methods generate a clock signal at a frequency and...
US-9,244,476 Electronic ballast with power factor correction
According to an exemplary implementation, an electronic ballast includes an input filter coupled to a resonant tank. The resonant tank is configured to generate...
US-9,244,134 XMR-sensor and method for manufacturing the XMR-sensor
An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an...
US-9,240,800 System that obtains a switching point with the encoder in a static position
A system including an encoder, multiple sensing elements and control logic. The encoder has a pole pitch and is configured to rotate in a direction of rotation....
US-9,240,721 Multiphase digital current mode controller with dynamic current allocation
A multiphase switching regulator includes a power stage with at least a first phase and a second phase for supplying power to a load through inductors coupling...
US-9,240,546 Magnetoresistive devices and methods for manufacturing magnetoresistive devices
A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a...
US-9,240,462 Field-effect transistor with local source/drain insulation and associated method of production
A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer...
US-9,240,450 IGBT with emitter electrode electrically connected with impurity zone
A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary...
US-9,240,225 Current sense amplifier with replica bias scheme
Some embodiments of the present disclosure relate to a sense amplifier architecture that facilitates fast and accurate read operations. The sense amplifier...
US-9,239,386 Sonic sensors and packages
Embodiments relate to integrated sonic sensors having a transmitter, a receiver and driver electronics integrated in a single, functional package. In one...
US-9,237,624 LED driver with compensation of thermally induced color drift
A circuit arrangement includes a number of light emitting diodes emitting light of different colors arranged adjacent to each other for additive color mixing to...
US-9,236,878 Analog-to-digital conversion
A method is disclosed. An analog signal is sampled to form a sample value using a sample and hold circuit. The sample value is converted to form a first digital...
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