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Patent # Description
US-9,280,501 Compatible network node, in particular, for can bus systems
A network node is provided, including a device, in particular, an error detection logic, which is deactivated if it is detected that a signal according to a...
US-9,279,883 Method and device for radar applications
A device for radar applications includes a computing engine, a radar acquisition unit connected to the computing engine, a timer unit connected to the computing...
US-9,279,864 Sensor device and sensor arrangement
A vertical Hall sensor structure according to an embodiment includes a Hall effect region arranged between a first interface and a second interface of the Hall...
US-9,279,856 Die, chip, method for driving a die or a chip and method for manufacturing a die or a chip
In various embodiments, a die is provided. The die may include a physical unclonable function circuit configured to provide an output signal, wherein the output...
US-9,277,606 Propagation delay compensation for floating buck light emitting diode (LED) driver
Devices, systems, and methods for improving a current spread of a light emitting diode (LED). Some aspects including a peak detector and a variable gain...
US-9,276,604 Feed forward double-sampling modulator
Representative implementations of devices and techniques provide analog to digital conversion of an analog input. A multistage modulator using a feed-forward...
US-9,276,135 Junction field effect transistor with vertical PN junction
An embodiment relates to a JFET with a channel region and a gate region forming a pn junction. Between a source region and a drain region in a semiconductor...
US-9,276,107 Semiconductor device having buried gate electrode structures
A semiconductor device includes first and second gate electrode structures and a connection plug. The first gate electrode structure is buried in a...
US-9,276,097 Gate overvoltage protection for compound semiconductor transistors
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound...
US-9,275,986 Transistor and tunable inductance
According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source...
US-9,275,973 Electronic device and method for fabricating an electronic device
An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main...
US-9,275,944 Semiconductor package with multi-level die block
A semiconductor package includes a block having a first side, a second side opposite the first side and a recessed region extending from the second side toward...
US-9,275,926 Power module with cooling structure on bonding substrate for cooling an attached semiconductor chip
According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive...
US-9,275,916 Removable indicator structure in electronic chips of a common substrate for process adjustment
A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate is provided, wherein the method comprises...
US-9,275,895 Semiconductor component and methods for producing a semiconductor component
A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor...
US-9,275,878 Metal redistribution layer for molded substrates
Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of...
US-9,275,862 Compensation devices
Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for...
US-9,275,324 Booster antenna structure for a chip card
In various embodiments, a booster antenna structure for a chip card is provided, wherein the booster antenna structure may include a booster antenna; and an...
US-9,274,998 Drive train control
Various techniques relating to drive train control are disclosed. In an embodiment, in a first mode of operation communication between a controller and a...
US-9,274,183 Vertical hall device comprising first and second contact interconnections
A vertical Hall device includes a Hall effect region formed in a substrate and a sequence of at least six contacts arranged in or at a surface of the Hall...
US-9,274,163 Turret handlers and methods of operations thereof
In one embodiment, a method of testing a semiconductor component includes loading a plurality of semiconductor components into a main turret of a turret...
US-9,270,248 Impedance matching network with improved quality factor and method for matching an impedance
An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt...
US-9,269,961 Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an...
A lithium battery includes a cathode, an anode including a component made of silicon, a separator element disposed between the cathode and the anode, an...
US-9,269,807 Semiconductor device and method of making the same
A semiconductor device includes a drift region in a first region of a semiconductor body. The drift region includes dopants of a first conductivity type. A...
US-9,269,769 Semiconductor component including a short-circuit structure
A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped...
US-9,269,713 Semiconductor device and method for producing the same
A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face,...
US-9,269,711 Semiconductor device
A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges...
US-9,269,685 Integrated circuit package and packaging methods
An integrated circuit package includes a package module formed from successive build-up layers which define circuit interconnections, a cavity formed on a...
US-9,269,669 Process for producing a multifunctional dielectric layer on a substrate
A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal...
US-9,269,655 Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the...
US-9,269,654 Semiconductor device and method of manufacture thereof
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment...
US-9,269,635 CMOS Transistor with dual high-k gate dielectric
A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a...
US-9,269,594 High power ceramic on copper package
According to an embodiment of a high power package, the package includes a heat sink containing enough copper to have a thermal conductivity of at least 350...
US-9,269,592 Method of manufacturing a semiconductor device
A transistor is formed by forming a ridge including a first ridge portion and a second ridge portion in a semiconductor substrate, the ridge extending along a...
US-9,268,001 Differential perpendicular on-axis angle sensor
Embodiments relate to magnetic field angle sensors, such as on-axis magnetic field angle sensors. In an embodiment, a magnetic field angle sensor comprises a...
US-9,267,972 Integrated galvanically isolated meter devices and methods for making integrated galvanically isolated meter...
An integrated galvanically isolated meter devices and method for making integrated meter devices are disclosed. An embodiment of an integrated meter device...
US-9,267,781 On-axis magnetic field angle sensors, systems and methods
Embodiments relate to magnetic field sensors, such as magnetic field angle sensors with generally on-axis arrangements of sensor elements relative to a rotation...
US-9,266,719 Methods of manufacture MEMS devices
Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive...
US-9,263,619 Semiconductor component and method of triggering avalanche breakdown
A semiconductor component includes an auxiliary semiconductor device configured to emit radiation. The semiconductor component further includes a semiconductor...
US-9,263,563 Semiconductor device package
In an embodiment, a semiconductor device package includes a bidirectional switch circuit. The bidirectional switch circuit includes a first semiconductor...
US-9,263,552 MOS-transistor with separated electrodes arranged in a trench
A MOS transistor is produced by forming a first trench in a semiconductor body, forming a first isolation layer on inner surfaces of the first trench, and...
US-9,263,545 Method of manufacturing a high breakdown voltage III-nitride device
A method of manufacturing a semiconductor device includes forming a semiconductor body including a compound semiconductor material on a substrate, the compound...
US-9,263,529 Semiconductor device with vertically inhomogeneous heavy metal doping profile
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first...
US-9,263,443 Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT
A semiconductor device includes a first semiconductor die including a normally-off transistor and a second semiconductor die including a plurality of transistor...
US-9,263,440 Power transistor arrangement and package having the same
Various embodiments provide a power transistor arrangement, which may include a carrier including at least a main region, a first terminal region and a second...
US-9,263,439 III-nitride switching device with an emulated diode
Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching...
US-9,263,430 Semiconductor ESD device and method of making same
A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity...
US-9,263,428 Diode biased ESD protection device and method
An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically...
US-9,263,425 Semiconductor device including multiple semiconductor chips and a laminate
A semiconductor device includes a laminate, a first semiconductor chip at least partly embedded in the laminate, a second semiconductor chip mounted on a first...
US-9,263,421 Semiconductor device having multiple chips mounted to a carrier
A semiconductor device includes a chip carrier having a first surface and a second surface opposite to the first surface. The device further includes a first...
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