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Patent # Description
US-9,322,858 System and method for a phase detector
In accordance with an embodiment, a method of detecting a phase difference between a first signal and a second signal include latching a state of the first...
US-9,322,840 Resistive element
A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor...
US-9,319,779 System and method for transducer biasing and shock protection
In accordance with an embodiment, an interface circuit includes an amplifier configured to be coupled to a transducer, a first bypass circuit coupled to a first...
US-9,319,006 System and method for a radio frequency coupler
In accordance with an embodiment, a directional coupler includes a coupler circuit and at least one amplifier coupled between a coupler circuit isolated port...
US-9,318,978 Voltage converter with soft communication networks
Embodiments of the present invention describe a voltage converter and a method for operating the voltage converter. In one embodiment the voltage converter...
US-9,318,633 Photodetector with controllable spectral response
A photodetector includes a semiconductor substrate having an irradiation zone configured to generate charge carriers having opposite charge carrier types in...
US-9,318,592 Active area shaping of III-nitride devices utilizing a source-side field plate and a wider drain-side field plate
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a...
US-9,318,560 Group III-V device with strain-relieving layers
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V...
US-9,318,550 Semiconductor device with device separation structures
A semiconductor device includes a first gate electrode structure, a second gate electrode structure, a device separation structure, and cell separation...
US-9,318,549 Semiconductor device with a super junction structure having a vertical impurity distribution
A super junction semiconductor device includes a semiconductor portion with parallel first and second surfaces. An impurity layer of a first conductivity type...
US-9,318,485 Capacitor arrangements and method for manufacturing a capacitor arrangement
In various embodiments, a capacitor arrangement is provided, which may include a substrate; a plurality of first doped regions and a plurality of second doped...
US-9,318,483 Reverse blocking transistor device
A transistor device includes at least one transistor cell. The cell includes a drift region, a source region, a body region arranged between the source region...
US-9,318,473 Semiconductor device including a polymer disposed on a carrier
In a method of manufacturing a semiconductor device, a first semiconductor element is mounted on a carrier. A b-stage curable polymer is deposited on the...
US-9,318,446 Metal deposition on substrates
Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more...
US-9,318,417 Gallium nitride devices
Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some...
US-9,318,358 Etching device and a method for etching a material of a workpiece
An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the...
US-9,318,355 Power semiconductor device with a double metal contact
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the...
US-9,316,706 Minimum magnetic field detection systems and methods in magnetoresistive sensors
Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. A sensor can comprise two magnetoresistive (xMR) sensor...
US-9,316,705 Vertical hall effect-device
A vertical Hall effect device is provided and includes a Hall effect layer having a first, second, third, and fourth Hall effect region, which are at least...
US-9,316,680 Method, device and circuitry for detecting a failure on a differential bus
An exemplary embodiment relates to a method for detecting a failure on a differential bus. The method may include: determining an allowed voltage range of the...
US-9,316,663 Intelligent field shaping for magnetic speed sensors
The present disclosure provides for techniques to improve the sensitivity of magnetic sensor systems. One embodiment of a magnetic sensor system includes a...
US-9,313,898 Low viscosity polymeric printing solutions and electronic components bearing polyimide based upon the low...
An electrical component that includes a substrate and a polymeric layer oriented in working relation with the substrate, the polymeric layer including a low...
US-9,313,897 Method for electrophoretically depositing a film on an electronic assembly
A packaged component and a method for making a packaged component are disclosed. In an embodiment the packaged component includes a component carrier having a...
US-9,313,851 Standby power for LED drivers
Methods, devices, and circuits are disclosed for regulating a first parameter of one or more LEDs. The methods, devices, and circuits further disclose...
US-9,313,052 Method and apparatus for signal transmission
A method for receiving signals includes detecting information signal pulses on a first signal transmission channel, generating an output signal dependent on the...
US-9,312,898 Apparatus and a method for handling a received signal, and a mixer unit
An apparatus for handling a received signal comprises a reception device, a mixer unit and a compensating unit. The reception unit can receive a received...
US-9,312,767 Reconfigurable multiphase power stage for switched mode chargers
Methods, devices, and integrated circuits are disclosed for providing a buck converter charger in a multiphase buck converter topology comprising at least a...
US-9,312,760 Switched-mode power converter with split partitioning
A power converter is described that includes components arranged within a first die and a second die of a single package. The first die includes one or more...
US-9,312,472 Vertical hall device with electrical 180 degree symmetry
A vertical Hall device indicative of a magnetic field parallel to a surface of a substrate comprises first, second, third and fourth terminals. The vertical...
US-9,312,375 III-Nitride device with solderable front metal
Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using...
US-9,312,374 Integrated power device with III-nitride half bridges
A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
US-9,312,369 Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the...
US-9,312,346 Semiconductor device with a charge carrier compensation structure and method for the production of a...
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity...
US-9,312,338 Semiconductor device containing chalcogen atoms and method of manufacturing
A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The...
US-9,312,334 Semiconductor component
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and...
US-9,312,250 Chip, chip arrangement and method for producing a chip
Various embodiments provide a chip. The chip has a carrier, an integrated circuit formed above the carrier, and an energy storage element. The energy storage...
US-9,312,245 III-nitride device and FET in a package
One exemplary disclosed embodiment comprises a three-terminal stacked-die package including a field effect transistor (PET), such as a silicon PET, stacked atop...
US-9,312,226 Semiconductor device having an identification mark
A semiconductor device includes a chip, a contact pad arranged over the front side of the chip and an identification mark arranged over the contact pad. The...
US-9,312,212 Method for housing an electronic component in a device package and an electronic component housed in the device...
A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a...
US-9,312,172 Semiconductor device and method for making same
One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the...
US-9,312,135 Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a...
US-9,312,120 Method for processing an oxygen containing semiconductor body
A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first...
US-9,310,819 Power converter including integrated driver providing overcurrent protection
In one implementation, a power converter includes an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V...
US-9,310,554 Integrated circuit including non-planar structure and waveguide
One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first...
US-9,310,445 Power source arrangement and method of diagnosing a power source arrangement
An embodiment method of diagnosing a power source arrangement includes a plurality of n power sources connected in series between output terminals, wherein...
US-9,310,398 Current sensor package, arrangement and system
Embodiments of the present invention provide a current sensor package for sensing a current flowing in a primary conductor of a substrate. The current sensor...
US-9,309,105 Sensor structure for sensing pressure waves and ambient pressure
In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive...
US-9,306,064 Semiconductor device and integrated apparatus comprising the same
The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer...
US-9,306,058 Integrated circuit and method of manufacturing an integrated circuit
An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a...
US-9,306,011 Semiconductor device having areas with different conductivity types and different doping concentrations
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure...
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