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Patent # Description
US-9,312,767 Reconfigurable multiphase power stage for switched mode chargers
Methods, devices, and integrated circuits are disclosed for providing a buck converter charger in a multiphase buck converter topology comprising at least a...
US-9,312,760 Switched-mode power converter with split partitioning
A power converter is described that includes components arranged within a first die and a second die of a single package. The first die includes one or more...
US-9,312,472 Vertical hall device with electrical 180 degree symmetry
A vertical Hall device indicative of a magnetic field parallel to a surface of a substrate comprises first, second, third and fourth terminals. The vertical...
US-9,312,375 III-Nitride device with solderable front metal
Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using...
US-9,312,374 Integrated power device with III-nitride half bridges
A semiconductor device that includes a plurality of isolated half-bridges formed in a common semiconductor die.
US-9,312,369 Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the...
US-9,312,346 Semiconductor device with a charge carrier compensation structure and method for the production of a...
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity...
US-9,312,338 Semiconductor device containing chalcogen atoms and method of manufacturing
A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The...
US-9,312,334 Semiconductor component
A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and...
US-9,312,250 Chip, chip arrangement and method for producing a chip
Various embodiments provide a chip. The chip has a carrier, an integrated circuit formed above the carrier, and an energy storage element. The energy storage...
US-9,312,245 III-nitride device and FET in a package
One exemplary disclosed embodiment comprises a three-terminal stacked-die package including a field effect transistor (PET), such as a silicon PET, stacked atop...
US-9,312,226 Semiconductor device having an identification mark
A semiconductor device includes a chip, a contact pad arranged over the front side of the chip and an identification mark arranged over the contact pad. The...
US-9,312,212 Method for housing an electronic component in a device package and an electronic component housed in the device...
A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a...
US-9,312,172 Semiconductor device and method for making same
One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the...
US-9,312,135 Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
The generation of auxiliary crystal defects is induced in a semiconductor substrate. Then the semiconductor substrate is pre-annealed at a temperature above a...
US-9,312,120 Method for processing an oxygen containing semiconductor body
A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first...
US-9,310,819 Power converter including integrated driver providing overcurrent protection
In one implementation, a power converter includes an output stage integrated circuit (IC) in a group III-V die including a depletion mode group III-V...
US-9,310,554 Integrated circuit including non-planar structure and waveguide
One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first...
US-9,310,445 Power source arrangement and method of diagnosing a power source arrangement
An embodiment method of diagnosing a power source arrangement includes a plurality of n power sources connected in series between output terminals, wherein...
US-9,310,398 Current sensor package, arrangement and system
Embodiments of the present invention provide a current sensor package for sensing a current flowing in a primary conductor of a substrate. The current sensor...
US-9,309,105 Sensor structure for sensing pressure waves and ambient pressure
In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive...
US-9,306,064 Semiconductor device and integrated apparatus comprising the same
The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer...
US-9,306,058 Integrated circuit and method of manufacturing an integrated circuit
An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a...
US-9,306,011 Semiconductor device having areas with different conductivity types and different doping concentrations
A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure...
US-9,306,010 Semiconductor arrangement
A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second...
US-9,305,917 High electron mobility transistor with RC network integrated into gate structure
A high electron mobility transistor includes a buffer region and a barrier region adjoining and extending along the buffer region, the buffer and barrier...
US-9,305,876 Device including a semiconductor chip and wires
A device includes a carrier, a first semiconductor chip arranged over the carrier and a first electrically conductive element arranged over the carrier. The...
US-9,305,874 Baseplate for an electronic module and method of manufacturing the same
Various embodiments provide a baseplate for an electronic module, wherein the baseplate comprises a conductive material; and a recess formed in one main surface...
US-9,305,798 Device and method for stopping etching process
A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method...
US-9,304,166 Method and system for wafer level testing of semiconductor chips
A system and method for wafer level testing of semiconductor chips are provided. In one embodiment, the system comprises a plurality of semiconductor chips...
US-9,304,153 System and method for power supply testing
In one embodiment, a method of verifying a component coupled to an output of a power supply includes measuring a frequency response from a control input of the...
US-9,303,327 Electric component with an electrophoretically deposited film
A system, a packaged component and a method for making a packaged component are disclosed. In an embodiment a system comprises a component carrier, a component...
US-9,302,637 Vehicle voltage supply
One embodiment provides a vehicle voltage supply having a vehicle battery, a load with two voltage supply connections, a fuse in a path between the vehicle...
US-9,300,215 Dimmable LED power supply with power factor control
A dimmable LED power supply circuit arrangement is disclosed. The circuit arrangement includes a flyback converter coupled between an input for receiving a...
US-9,299,834 Trench connection between a transistor and a further component
A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The...
US-9,299,829 Vertical transistor component
A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged...
US-9,299,819 Deep gate trench IGBT
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a...
US-9,299,793 Semiconductor device with a field plate trench having a thick bottom dielectric
Disclosed is a power device, such as a power MOSFET, and methods for fabricating same. The device includes a field plate trench. The device further includes...
US-9,299,712 Semiconductor device and method of making same
A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are...
US-9,299,690 Method for fabricating a power semiconductor package including vertically stacked driver IC
In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the...
US-9,299,673 Method for manufacturing a semiconductor chip with each contact pad having a pad cell associated therewith
Embodiments of the present invention relate to a semiconductor chip comprising a plurality of contact pads, which are arranged in an edge area on a surface of...
US-9,299,656 Vias and methods of formation thereof
In accordance with an embodiment of the present invention, a semiconductor device includes a first metal line disposed in a first insulating layer, and a via...
US-9,297,669 Bias field generation for a magneto sensor
Embodiments related to the generation of magnetic bias fields for magnetic sensing are described and depicted. In one embodiment, a sensor includes at least one...
US-9,295,124 System using shunt circuits to selectively bypass open loads
According to an exemplary embodiment, a shunt circuit includes a floating shunt switch configured to bypass at least one load, for example at least one LED,...
US-9,294,087 Integrated hall-controlled switch devices
Embodiments relate to Hall-controlled switch devices. In an embodiment, a Hall switch and a load switch are integrated in a single integrated circuit device....
US-9,293,998 Buck-flyback converter
A two-transistor flyback converter includes a transformer having a primary side and a secondary side, a first transistor connected between an input voltage...
US-9,293,558 Semiconductor device
A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain...
US-9,293,533 Semiconductor switching devices with different local transconductance
A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination...
US-9,293,529 Semiconductor device with an array of lamellas and a micro-electro-mechanical resonator
A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of...
US-9,293,528 Field-effect semiconductor device and manufacturing therefor
A power semiconductor device includes a semiconductor body having a first surface and including an active area including n-type semiconductor regions and p-type...
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