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Patent # Description
US-6,800,890 Memory architecture with series grouped by cells
An IC with a memory array having a series architecture is disclosed. A memory cell of a series group comprises a transistor coupled to a capacitor in parallel....
US-6,800,817 Semiconductor component for connection to a test system
The semiconductor component is provided for connection to a test system. An external clock signal with a modulated duty ratio can be input to the semiconductor...
US-6,800,407 Method for experimentally verifying imaging errors in photomasks
The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a...
US-6,799,290 Data path calibration and testing mode using a data bus for semiconductor memories
A method for testing a data path for a semiconductor memory device, in accordance with the present invention, includes providing a semiconductor memory device...
US-6,798,706 Integrated circuit with temperature sensor and method for heating the circuit
A temperature sensor is integrated together with an integrated circuit on a chip, the sensor delivering a temperature-dependent measuring signal or at least...
US-6,798,689 Integrated memory with a configuration of non-volatile memory cells and method for fabricating and for...
An integrated memory with a configuration of non-volatile memory cells based on ferromagnetic storage contains both powerful memory cells with a magnetoresistive...
US-6,798,303 Clock signal generating device
A clock signal generating device is described, having an oscillator and a PLL connected downstream thereof. The clock signal generating device is distinguished...
US-6,798,272 Shift register for sequential fuse latch operation
A sequential fuse latch device comprises a plurality of fuse latches, wherein each fuse latch is a data storage element, and a shift register comprising a...
US-6,798,252 High speed sense amplifier
A high-speed sense current amplifier with a low power consumption for a memory cell, the sense current amplifier having: a first current mirror circuit, which...
US-6,798,234 Apparatus for protecting an integrated circuit formed in a substrate and method for protecting the circuit...
An apparatus for protecting an integrated circuit formed in a substrate and a method for protecting the integrated circuit against reverse engineering includes...
US-6,798,051 Connection of packaged integrated memory chips to a printed circuit board
An interface unit and a printed circuit board configuration includes at least two interface units for linking conventional commercially available packages of...
US-6,798,045 Lead frame, circuit board with lead frame, and method for producing the lead frame
A lead frame is described which has at least one integrated electronic circuit. The integrated electronic circuit is situated in a region of a main area of the...
US-6,798,042 Pin diode and method for fabricating the diode
The invention is a diode having at least one trench in the semiconductor substrate and insulation configured on the surface of the semiconductor substrate so...
US-6,798,040 Power semiconductor switch
An IGBT structure includes successive regions whose conductivities have alternating signs. The structure is dimensioned for punch-through and is provided with...
US-6,798,014 Semiconductor memory cell and semiconductor component as well as manufacturing methods therefore
A semiconductor memory cell with a storage transistor, a selection transistor and a layer structure is provided. The layer structure is formed of at least two...
US-6,798,000 Field effect transistor
A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire...
US-6,797,981 Test wafer and method for producing the test wafer
A test wafer is provided, in particular for use in monitoring inspection installations for semiconductor fabrication that are based on the analysis of scattered...
US-6,797,638 Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures...
A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH.sub.3 F and...
US-6,797,636 Process of fabricating DRAM cells with collar isolation layers
A process of preparing DRAM cells with collar isolation layers that isolate the trench top with vertical cell and active area from the buried plate to eliminate...
US-6,797,613 Process for depositing WSix layers on a high topography with a defined stoichiometry
Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten...
US-6,797,562 Method for manufacturing a buried strap contact in a memory cell
A method is provided for manufacturing a buried strap contact between a transistor and a trench capacitor in a memory cell, particularly a DRAM memory cell. In...
US-6,797,236 Design and signal recovery of biomolecular sensor arrays
The present invention provides an apparatus and method of reducing noise associated with biomolecular measurement systems. Sensor detection system noise...
US-6,797,029 Process facility having at least two physical units each having a reduced density of contaminating particles...
In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The...
US-6,795,840 Method for generating a sequence of random numbers of A 1/f-noise
A computer programmed to process a method for generating a sequence of random numbers of a 1/f noise has the following steps: 1). Determining a constant step...
US-6,795,696 Circuit configuration for filtering a radio-frequency signal
A circuit configuration for filtering a radio-frequency signal, in particular, in tuners for television sets, includes a control signal connection for feeding in...
US-6,795,549 Drive circuit
Driver circuit for driving voice and data signals from a switching center via a subscriber line (38) to a subscriber terminal, having: a controllable voice signal...
US-6,795,347 Memory circuit
The non-volatile memory cell of a memory circuit includes at least one enhancement pMOS transistor having a floating gate. It further includes an enhancement...
US-6,795,341 Circuit arrangement for the storage of digital data
In order to make memories more secure against interference occurring in operation, error correction devices are normally associated with them. If the memory...
US-6,795,329 Memory integrated circuit
An improved memory IC whose memory cells are configured in a chain architecture is disclosed. The first diffusion regions of the cell transistors of the chain...
US-6,794,894 Method and system for bidirectional signal transmission
A system for bidirectional signal transmission of an electrical signal from a transmitter at a first location to a receiver at a second location, and from a...
US-6,794,705 Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
A multi-layer electrode (246) and method of fabrication thereof in which a conductive region (244) is separated from a barrier layer (222) by a first conductive...
US-6,794,635 Apparatus and method for detecting an amount of depolarization of a linearly polarized beam
An apparatus and a method for detecting an amount of depolarization of a linearly polarized beam transmitted by a birefringent medium in the direction of the...
US-6,794,312 Layering nitrided oxide on a silicon substrate
A process for producing a nitrided oxide layer on a silicon semiconductor substrate includes introducing a multiplicity of wafers into an atmospheric batch...
US-6,794,282 Three layer aluminum deposition process for high aspect ratio CL contacts
A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the...
US-6,794,262 MIM capacitor structures and fabrication methods in dual-damascene structures
A metal-insulator-metal (MIM) capacitor (242/252) structure and method of forming the same. A dielectric layer (214) of a semiconductor device (200) is patterned...
US-6,794,259 Method for fabricating self-aligning mask layers
A method for fabricating a self-aligning mask layer includes the steps of forming a surface to be masked in a carrier substrate, the surface having different...
US-6,794,249 Method for fabricating a memory cell
An electrically conductive layer or layer sequence preferably includes a metal-containing layer applied to a metal silicide or a polysilicon layer to reduce the...
US-6,794,242 Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing...
A Top Oxide Method is used to form an oxide layer over an array of vertical transistors as in a trench dynamic random access memory (DRAM) array with vertically...
US-6,794,209 Method for the in-situ fabrication of DFB lasers
The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy...
US-6,794,095 Method of fabricating a microstructure and photolithography trimming mask
A photolithographic fabrication method for a microstructure on a substrate, in particular interconnects of a DRAM (dynamic random access memory), includes a...
US-6,792,036 Method for estimating channel impulse responses of a mobile radio channel
A method is described for estimating channel impulse responses of a mobile radio channel with a broad bandwidth by a code division multiplexing method, and with...
US-6,791,871 MRAM configuration
An MRAM configuration has selection transistors and MTJ layer sequences lying in parallel with each other in a memory cell matrix. A considerable space saving...
US-6,791,420 Phase locked loop for recovering a clock signal from a data signal
A phase locked loop for recovering a clock signal from a data signal including a delay locked loop with a nonlinear digital phase detector. The delay locked loop...
US-6,791,411 Power amplifier and a method for operating a power amplifier
According to the invention, the high-frequency power amplifier is characterised in that the power transistor is switched in such a way that said transistor is...
US-6,791,358 Circuit configuration with signal lines for serially transmitting a plurality of bit groups
A circuit configuration has a transmitter unit connected to a first signal line and a receiver unit connected to a second signal line and is coupled to the...
US-6,791,357 Bus signal hold cell, bus system, and method
The invention relates to an integrated bus signal hold cell that is coupled with a bus line via a common input/output, and that has at least two inverters for...
US-6,791,349 Electrical component with a contact and method for forming a contact on a semiconductor material
An electrical component contains a pad formed of an electrically conductive material. The pad serves for the application of a contact element and is complemented...
US-6,791,303 Circuit configuration for voltage stabilization
A voltage stabilization circuit is configured between two signal lines. Each of the signal lines carries a signal, and an interference signal is superimposed on...
US-6,791,183 Power semiconductor module and cooling element for holding the power semiconductor module
A power semiconductor module and a cooling element for holding the power semiconductor module are described. The power semiconductor module has a housing that...
US-6,791,074 Light curtain system for establishing a protective light curtain, tool and system for processing objects and...
A light curtain system is provided for establishing a protective light curtain for a tool in a system for processing objects such as wafers, and is particularly...
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