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Patent # Description
US-9,391,191 Trench FET having merged gate dielectric
In one implementation, a trench field-effect transistor (trench FET) includes a semiconductor substrate having a drain region, a drift zone over the drain...
US-9,391,185 III-nitride power semiconductor device
A III-nitride power semiconductor device that includes a two dimensional electron gas having a reduced charge region under the gate thereof.
US-9,391,154 Method of manufacturing a device by locally heating one or more metalization layers and by means of selective...
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more...
US-9,391,149 Semiconductor device with self-charging field electrodes
A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, and a field electrode structure...
US-9,391,004 Power semiconductor package with conductive clip and related method
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can,...
US-9,391,003 Semiconductor package with conductive clip
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can,...
US-9,390,975 Methods for producing a tunnel field-effect transistor
A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning...
US-9,390,973 On-chip RF shields with backside redistribution lines
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes...
US-9,390,944 Electrical connectivity for circuit applications
According to example configurations herein, a leadframe includes a first conductive strip, a second conductive strip, and a third conductive strip disposed...
US-9,390,883 Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative...
US-9,389,999 System and method for emulating an EEPROM in a non-volatile memory device
The invention relates to an electronic memory system, and more specifically, to a system for emulating an electrically erasable programmable read only memory in...
US-9,389,284 Spinning current hall sensor with residual offset calibration signal
A spinning current Hall sensor configured to provide a sequence of input signals in response to a bias current being applied to a sequence of terminals of Hall...
US-9,389,247 Current sensors
Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example Bx and By. The...
US-9,389,200 Sensor device, a method and a sensor to determine a relative concentration of a first kind of ions with respect...
A sensor device according to an embodiment includes a semiconductor substrate including a plurality of channels, the channels connecting a cavity and a...
US-9,389,098 System that obtains a switching point with the encoder in a static position
A system including an encoder, multiple sensing elements and control logic. The encoder has a pole pitch and is configured to rotate in a direction of rotation....
US-9,387,797 Direction indicator circuit for controlling a direction indicator in a vehicle
A direction indicator circuit for controlling a direction indicator in a vehicle is provided. The direction indicator circuit may include a first terminal for...
US-9,387,613 Semiconductor formation arrangement
A semiconductor package formation arrangement includes a mold housing with an interior cavity having top, bottom and first and second end sides. A gate for...
US-9,385,839 Network retransmission protocols using a proxy node
One embodiment relates to a device. The device includes reception circuitry adapted to receive a data unit from a first node of a network and a confirmation...
US-9,385,726 Chip and method for manufacturing a chip
According to one embodiment, a chip is described comprising a plurality of supply lines delimiting a plurality of cell areas and a gate comprising a first...
US-9,385,700 Clock monitoring for sequential logic circuits
A monitor circuit for monitoring a clock signal is described. In accordance with one example of the disclosure, the monitor circuit includes a pulse generator...
US-9,385,609 Analog current estimation and digital estimation correction for a multiphase buck converter
A phase current estimator for a switching power converter includes analog circuitry for generating a phase current estimate error by comparing a phase current...
US-9,385,599 Converter circuit and method for converting an input voltage to an output voltage using a white noise generator
A converter circuit is described comprising a switch circuit configured to provide an output voltage, a control circuit comprising an analog control portion and...
US-9,385,228 Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface...
US-9,385,222 Semiconductor device with insert structure at a rear side and method of manufacturing
A cavity is formed in a first semiconductor layer that is formed on a semiconducting base layer. The cavity extends from a process surface of the first...
US-9,385,181 Semiconductor diode and method of manufacturing a semiconductor diode
A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged...
US-9,385,119 Semiconductor arrangement with a load, a sense and a start-up transistor
A semiconductor arrangement includes a semiconductor body with a first active region, a second active region and an isolation region arranged between the first...
US-9,385,111 Electronic component with electronic chip between redistribution structure and mounting structure
An electronic component which comprises an electrically conductive mounting structure, an electronic chip on the mounting structure, an electrically conductive...
US-9,385,107 Multichip device including a substrate
A device includes a substrate including an electrically insulating core, a first electrically conductive material arranged over a first main surface of the...
US-9,385,075 Glass carrier with embedded semiconductor device and metal layers on the top surface
A device includes a semiconductor material having a first main surface, an opposite surface opposite to the first main surface and a side surface extending from...
US-9,385,059 Overmolded substrate-chip arrangement with heat sink
An electronic device comprises a substrate, at least one electronic chip mounted on and electrically connected to the substrate and being configured as a system...
US-9,385,031 Method for providing a self-aligned pad protection in a semiconductor device
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over...
US-9,385,008 Semiconductor component of semiconductor chip size with flip-chip-like external contacts
A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the...
US-9,384,983 Method of manufacturing a vertical semiconductor device
A method for producing a vertical semiconductor device includes providing a semiconductor substrate having a first surface and comprising an n-doped first...
US-9,384,960 Method of manufacturing a semiconductor device with a continuous silicate glass structure
A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including...
US-9,384,437 Smart card module, smart card body, smart card and smart card production method
In various embodiments, a smart card module is provided. The smart card module includes a carrier having a first main surface and a second main surface opposite...
US-9,384,117 Machine and methods for evaluating failing software programs
A machine for evaluating failing software programs, a non-transitory computer-readable storage medium with an error analysis program stored thereon and an error...
US-9,383,269 Circuits, methods, and computer programs to detect mechanical stress and to monitor a system
Embodiments provide a circuit, a method, and a computer program configured to detect mechanical stress and a circuit, a method, and a computer program...
US-9,383,227 Through bias pole for IGMR speed sensing
One embodiment relates to a sensing system that includes a magnetic encoder wheel having alternating pole magnetic domains along a circumference thereof. The...
US-9,382,111 Micromechanical system and method for manufacturing a micromechanical system
A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a...
US-9,380,381 Microphone package and method for providing a microphone package
A microphone package comprises a microphone. The microphone package also comprises a first analog-to-digital converter coupled to the microphone to provide a...
US-9,379,695 Circuit and method for operating a half-bridge
A circuit for operating a half-bridge is provided. The circuit may include a first multiplier circuit. The first multiplier circuit may be configured to...
US-9,379,691 Runtime compensated oscillator
Disclosed is a method for generating an oscillating signal and an oscillator circuit.
US-9,379,257 Electrical device and method for manufacturing same
An electrical device includes a first layer, a second layer and an intrinsic layer. The first layer is of a first conductivity type, wherein the second layer is...
US-9,379,231 Transistor having increased breakdown voltage
A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a...
US-9,379,196 Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure
In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first...
US-9,379,050 Electronic device
An electronic device includes a first transistor device with first contact elements, a second transistor device with second contact elements, and an electrical...
US-9,379,046 Module comprising a semiconductor chip
A module includes a semiconductor chip having at least a first terminal contact surface and a second terminal contact surface. A first bond element made of a...
US-9,379,033 Sensor package
A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface....
US-9,378,965 Highly conductive source/drain contacts in III-nitride transistors
In one embodiment, a method for fabricating a III-Nitride transistor on a III-Nitride semiconductor body is disclosed. The method comprises etching dielectric...
US-9,378,317 Method for detecting damage to a semiconductor chip
A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the...
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