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Material combinations for tunnel junction cap layer, tunnel junction hard
mask and tunnel junction stack seed...
A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114),...
Methods for producing a thermoelectric layer structure and components with
a thermoelectric layer structure
A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive...
Reducing stress in integrated circuits
A semiconductor chip in which stress on the effective stress on the substrate is reduced in order to reduce bowing. To reduce the effective stress, a stress...
Low-temperature processing of a ferroelectric strontium bismuth tantalate
layer, and fabrication of...
In a method for producing ferroelectric strontium bismuth tantalate having the composition Sr.sub.x Bi.sub.y Ta.sub.2 O.sub.9 (SBT) or Sr.sub.x Bi.sub.y (Ta,...
System and method for enabling a vendor mode on an integrated circuit
A system and method for enabling a vendor mode on an integrated circuit. A method is disclosed for applying a potential to a no-connect pin, whose function is...
ACS unit for a viterbi decoder
An ACS unit is proposed for a Viterbi decoder, which, in order to determine the path metrics of two states of a time step in a trellis diagram, compares the...
Memory access method and circuit configuration
A cache memory serves for accelerating accesses to an external memory of a microprocessor. Instead of an actually occurring hit event, a cache miss is signaled...
Integrated memory having an accelerated write cycle
An integrated memory has a respective terminal for a clock signal and a data clock signal and also a data terminal. For a write operation, the memory accepts a...
Circuit configuration for reading out a programmable link
A circuit configuration for reading out a programmable link enables programming the programmable link in addition to reading out the programmed value into a...
Memory device and method of outputting data from a memory device
A method of outputting data from a memory device, such as a dynamic random access memory, is disclosed. The method comprises the steps of providing an integrated...
Circuit configuration for a current switch of a bit/word line of a MRAM
A circuit configuration for a current switch of a bit line or a word line of a magnetoresistive random access memory (MRAM) device, comprising a directional...
Analog-to-digital converter and method for converting an analog signal into
a digital signal
The invention relates to an analog-to-digital converter (301), comprising several comparators (303) and a reference network, said reference network having...
Apparatus for converting a digital value into an analog signal
An apparatus converts a digital value including "a" bits into an analog signal and has 2.sup.b D/A converters. Here, b is an integer number that is greater than...
Crystal oscillator circuit having capacitors for governing the resonant
A crystal oscillator circuit has capacitors that govern the resonant circuit and are designed such that they can be connected and disconnected, for frequency...
Method and device for offset-voltage free voltage measurement and
adjustment of a reference voltage source of...
A method and device for measuring voltage of an internal reference voltage source of an integrated semiconductor circuit, in particular, a DRAM, including the...
Bandgap reference circuit and method for adjusting
The invention relates to a method for adjusting a BGR circuit. In a first adjustment step, an offset adjustment of a voltage differential amplifier is performed...
Field effect controlled semiconductor component
A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the...
Rapid deposition of borosilicate glass films
A method for rapidly depositing a borosilicate glass film on a semiconductor wafer includes controlling the pressure within the chamber, introducing oxygen into...
Recessed metal lines for protective enclosure in integrated circuits
Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be...
Self-aligned dual damascene etch using a polymer
A method for forming a dual damascene structure for a semiconductor device, in accordance with the present invention, includes providing conductive regions on a...
Method for roughening a surface of a semiconductor substrate
A method for roughening a surface of a semiconductor substrate includes the steps of placing the substrate in a furnace, introducing Oxygen and an inert gas,...
Method for fabricating transistors having damascene formed gate contacts
and self-aligned borderless bit line...
A Dynamic Random Access Memory is fabricated in a semiconductor body of a first conductivity type in which there have been formed an array of memory cells which...
Trench capacitor memory cell
An improved sub 8F.sup.2 memory cell is disclosed. The sub 8F.sup.2 cell includes a shallow transistor trench in which a buried portion of the transistor occupies.
The analog multiplier has a MOS input stage. This makes it possible to increase the linearity range of the multiplier. In a development, a cascode circuit having...
Optical filter and optical filtering method
An optical signal alternately traverses a total of n couplers and n-1 DGD units, arranged therebetween, with a differential group delay between two signal modes....
Limiter for refresh signal period in DRAM
The invention relates to a device (10) for outputting a refresh signal for a memory cell of a semiconductor memory device, the device (10) comprising: a...
Implementation of a temperature sensor to control internal chip voltages
A method of regulating a voltage of an internal voltage generator of an integrated circuit that includes sensing a temperature of an integrated circuit,...
Circuit technique for column redundancy fuse latches
Address information representing failed elements in an array portion of a device is delivered. Respective fail address bit values are stored in a plurality of...
Use of DQ pins on a ram memory chip for a temperature sensing protocol
A method of protecting an integrated circuit that includes sensing a temperature of an integrated circuit that has a data pin, generating a temperature data...
Method and apparatus for handling end of data processing in a data storage
A method and apparatus for handling end of data processing in a data storage device. The method includes receiving a plurality of user data bits at a write...
Apparatus for patterning a semiconductor wafer
An apparatus (100) for patterning the surface of a semiconductor wafer (130). A stage (148) is coupled to a motor (150) that is adapted to move the stage (148)...
Phase detector for a delay locked loop and delay locked loop with the phase
A phase detector for a delay locked loop with a delay unit that delays a periodic clock signal by a settable delay, has a first input for the periodic clock...
Configuration in which wafers are individually supplied to fabrication
units and measuring units located in a...
A configuration for treating wafers in at least one clean room includes a configuration of production units and measuring units that receive wafers via a...
Field effect transistor and method for producing a field effect transistor
The invention relates to a field effect transistor with a drain region, a source region, a channel region and a gate region. The gate region is provided with a...
Magnetic memory unit and magnetic memory array
A magnetic memory unit having a first magnetizable electrode, a second magnetizable electrode, and at least one nanotube arranged between the electrodes in a...
Method for producing a semiconductor structure, and use of the method
A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are...
Method to fill deep trench structures with void-free polysilicon or silicon
The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a...
Apparatus for monitoring the proper operation of components of an
electrical system carrying out the same or...
The apparatus monitors several system components for proper operation. Each of the system components to be monitored is assigned at least one dedicated...
Method of profiling disparate communications and signal processing
standards and services
A method of profiling disparate communications and signal processing standards. The method begins with selection of a set of communications and signal processing...
Circuit configuration for driving a programmable link
A circuit configuration for driving a programmable link has a volatile memory cell, which is coupled to the fuse for the permanent storage of data stored in the...
MRAM cell having frustrated magnetic reservoirs
A magnetoresistive random access memory (MRAM) cell, comprising a magnetic tunnel junction having frustrated magnetic reservoirs disposed oppositely along two...
Method for operating an MRAM semiconductor memory configuration
In a method for operating an MRAM semiconductor memory configuration, for the purpose of reading an item of stored information, reversible magnetic changes are...
FeRAM memory device
A FeRAM memory chip comprises an array 5 of non-volatile ferrocapacitor memory cells for storing data. Input pins receive data to be stored, and address data...
Electronic component with at least one semiconductor chip and method for
producing the electronic component
An electronic component having at least one semiconductor chip, a rewiring layer connected to the semiconductor chip, and a printed circuit board associated with...
Oscillator circuit using bonding wires for inductors and having a resonance
An oscillator circuit includes an oscillator core having two capacitances, two inductors designed as bonding wires, and a de-attenuation amplifier coupled to the...
Method and logic/memory module for correcting the duty cycle of at least
one control/reference signal
A method and logic/memory module set the desired corrected duty cycle between the time periods of the first and second level states of at least one...
Method of reliability testing
A method of reliability testing is disclosed. A critical breakdown resistance of a device is determined. The test structure is subjected to stress conditions and...
Switching regulator with dynamic current limiting and drive circuit for the
A switching regulator has a drive circuit, receiving an intermediate circuit input voltage, an output voltage of an intermediate circuit capacitor and an output...
Robust via structure and method
A conductive line is formed in a first insulating layer. A second insulating layer is formed over the conductive line and the first insulating layer. A via...
Device with at least one semiconductor component and a printed circuit
board and method of establishing an...
A device having a semiconductor component and a printed circuit board are described. The semiconductor component has external contacts and the printed circuit...