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Patent # Description
US-9,405,309 Dual mode low-dropout linear regulator
In one example, a method includes operating an LDO regulator system in one of a voltage regulation mode or a power balancing mode. The method further includes...
US-9,404,990 Sensor offset error compensation systems and methods using a correction factor
Embodiments relate to reducing offset error in sensor systems. In embodiments, the sensitivity and offset of a sensor depend differently on some parameter, e.g....
US-9,404,795 Opitical detector with adjustable spectral response
An optical detector includes a first set of one or more photodiodes configured to generate a first photocurrent according to a first spectral response function...
US-9,404,434 Universal solenoid driver
A device may include a driver integrated circuit (IC) comprising a first control unit and a second control unit, a first solenoid that is electrically coupled...
US-D762,597 Power semiconductor module
US-9,402,138 MEMS device and method of manufacturing a MEMS device
A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a...
US-9,402,137 Sound transducer with interdigitated first and second sets of comb fingers
A sound transducer includes a substrate with a cavity with extending from a first surface of the substrate, a body at least partially covering the cavity and...
US-9,401,663 Power converter circuit with AC output
A power converter circuit includes a synchronization circuit configured to generate at least one synchronization signal. A series circuit includes a number of...
US-9,401,606 System and method for providing active power balancing
According to one embodiment, a system for actively balancing power between several power units is disclosed. Each of the power units includes a corresponding...
US-9,401,399 Semiconductor device
A semiconductor device includes a transistor formed in a semiconductor substrate including a main surface. The transistor includes a source region, a drain...
US-9,401,355 Semiconductor device including a diode arranged in a trench
One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from...
US-9,401,352 Field-effect device and manufacturing method thereof
Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region,...
US-9,401,343 Method of processing a semiconductor wafer
A method of processing a semiconductor wafer includes forming semiconductor dies in the semiconductor wafer, each die having an active region containing devices...
US-9,401,322 Semiconductor devices and structures thereof
A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material...
US-9,400,636 Apparatus and method for calculating a result in a scalar multiplication
An apparatus for calculating a result of a scalar multiplication of a reference number with a reference point on an elliptic curve includes a random number...
US-9,400,513 Cascode circuit
An electronic circuit includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a load path and an...
US-D762,185 Power semiconductor module
US-9,397,871 Communication devices
Devices, systems and methods are provided where a request may be transmitted based on a first encoding scheme, and a response to the request may be transmitted...
US-9,397,684 Analog to digital converter circuits and methods of operation thereof
An analog to digital converter (ADC) circuit includes an input stage for supplying an input signal to an ADC for conversion to a digital signal and a control...
US-9,397,652 Circuitry and method for operating such circuitry
A circuitry is suggested, in particular a power switch, comprising a first electronic switch with an isolated gate; a second electronic switch with an isolated...
US-9,397,645 Circuit for common mode removal for DC-coupled front-end circuits
In one example, a method includes receiving a first differential signal including a first voltage signal and a second voltage signal, wherein the first...
US-9,397,636 System and method for driving transistors
In accordance with an embodiment, a circuit includes a first transistor, a second transistor having a reference node coupled to an output node of the first...
US-9,397,517 Cable compensation by zero-crossing compensation current and resistor
Methods, devices, and circuits are disclosed delivering a first level of output voltage to a rechargeable battery from a battery charger, the rechargeable...
US-9,397,212 Power converter package including top-drain configured power FET
In one implementation, a semiconductor package includes a top-drain vertical FET in a first active die, a source of the top-drain vertical FET situated on a...
US-9,397,208 Compound semiconductor device
A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor...
US-9,397,092 Semiconductor device in a semiconductor substrate and method of manufacturing a semiconductor device in a...
A semiconductor device in a semiconductor substrate includes a trench in a first main surface of the semiconductor substrate. The trench includes a first trench...
US-9,397,091 Semiconductor component arrangement comprising a trench transistor
A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body...
US-9,397,089 Group III-V HEMT having a selectably floating substrate
There are disclosed herein various implementations of a group III-V high electron mobility transistor (HEMT) having a selectably floating substrate. Such a...
US-9,397,055 Processing of thick metal pads
In an embodiment of the present invention, a method of forming a semiconductor device includes providing a semiconductor substrate including a first chip region...
US-9,397,022 Semiconductor device having a locally reinforced metallization structure
A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second...
US-9,397,018 Chip arrangement, a method for manufacturing a chip arrangement, integrated circuits and a method for...
A chip arrangement is provided, the chip arrangement, including a carrier; at least one chip electrically connected to a carrier top side; an encapsulation...
US-9,396,997 Method for producing a semiconductor component with insulated semiconductor mesas
A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface...
US-9,395,423 Current sensors, systems and methods for sensing current in a conductor
Embodiments relate to magnetic current sensors. In various embodiments, a current sensor can include a simple conductor having a constant cross-sectional...
US-9,395,404 Method for testing semiconductor chips or semiconductor chip modules
A semiconductor chip panel includes a plurality of semiconductor chips embedded in an encapsulation material. At least part of the semiconductor chips comprise...
US-9,391,604 Methods for monitoring functionality of a switch and driver units for switches
A gate driver unit includes an input stage, an output stage, a read/write interface, and a monitoring stage. The input stage is configured to receive control...
US-9,391,532 System and method for a switched-mode power converter
In accordance with an embodiment, a power converter includes an H-bridge switching arrangement, a transformer having a primary winding coupled to an output of...
US-9,391,263 Semiconductor devices having insulating substrates and methods of formation thereof
In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed...
US-9,391,192 Field effect semiconductor component and method for producing it
What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which...
US-9,391,191 Trench FET having merged gate dielectric
In one implementation, a trench field-effect transistor (trench FET) includes a semiconductor substrate having a drain region, a drift zone over the drain...
US-9,391,185 III-nitride power semiconductor device
A III-nitride power semiconductor device that includes a two dimensional electron gas having a reduced charge region under the gate thereof.
US-9,391,154 Method of manufacturing a device by locally heating one or more metalization layers and by means of selective...
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more...
US-9,391,149 Semiconductor device with self-charging field electrodes
A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, and a field electrode structure...
US-9,391,004 Power semiconductor package with conductive clip and related method
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can,...
US-9,391,003 Semiconductor package with conductive clip
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can,...
US-9,390,975 Methods for producing a tunnel field-effect transistor
A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning...
US-9,390,973 On-chip RF shields with backside redistribution lines
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes...
US-9,390,944 Electrical connectivity for circuit applications
According to example configurations herein, a leadframe includes a first conductive strip, a second conductive strip, and a third conductive strip disposed...
US-9,390,883 Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative...
US-9,389,999 System and method for emulating an EEPROM in a non-volatile memory device
The invention relates to an electronic memory system, and more specifically, to a system for emulating an electrically erasable programmable read only memory in...
US-9,389,284 Spinning current hall sensor with residual offset calibration signal
A spinning current Hall sensor configured to provide a sequence of input signals in response to a bias current being applied to a sequence of terminals of Hall...
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