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Patent # Description
US-9,748,374 Semiconductor device having a field-effect structure and a nitrogen concentration profile
A semiconductor device includes a silicon semiconductor body having a main surface and a nitrogen concentration which is lower than about 2*10.sup.14 cm.sup.-3...
US-9,748,242 Semiconductor device
A semiconductor device is provided that includes a composite semiconductor body including a high voltage depletion-mode transistor and a low voltage...
US-9,748,166 Semiconductor devices including control and load leads of opposite directions
A device includes a carrier and a semiconductor chip arranged over a surface of the carrier. The semiconductor chip includes a control electrode and a load...
US-9,748,140 Method of manufacturing semiconductor devices
A method for use in manufacturing semiconductor devices includes providing a wafer on a support, covering a central wafer portion of the wafer, and cutting a...
US-9,748,116 Electronic device and method of manufacturing the same
Various embodiments provide an electronic device, wherein the electronic device comprises a mounting surface configured to mount the electronic device to an...
US-9,748,102 Semiconductor chip arrangement and method thereof
A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a...
US-9,746,346 Linear position and rotary position magnetic sensors, systems, and methods
Embodiments relate to a position sensor comprising a magnetic target. The magnetic target includes a magnetic multipole configured to generate a magnetic field....
US-9,741,925 Method for doping an active Hall effect region of a Hall effect device and Hall effect device having a doped...
Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect...
US-9,741,841 Group III-V semiconductor device with strain-relieving layers
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V...
US-9,741,835 Semiconductor device and insulated gate bipolar transistor with transistor cells and sensor cell
A transistor cell region of a semiconductor device includes transistor cells that are electrically connected to a first load electrode. An idle region includes...
US-9,741,816 Electrical device and method for manufacturing same
A method for manufacturing an electrical device is disclosed. In an embodiment, the method includes providing a first layer of a first conductivity type,...
US-9,741,795 IGBT having at least one first type transistor cell and reduced feedback capacitance
An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the...
US-9,741,712 Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
A semiconductor device includes trench gate structures in a semiconductor body with hexagonal crystal lattice. A mean surface plane of a first surface is tilted...
US-9,741,677 Semiconductor device including antistatic die attach material
A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The...
US-9,741,639 Semiconductor chip, method for producing a semiconductor chip and method for soldering a semiconductor chip to...
A semiconductor chip includes a semiconductor body and a chip metallization applied on the semiconductor body. The chip metallization has an underside facing...
US-9,741,635 Electronic component
An electronic component includes one or more semiconductor dice embedded in a first dielectric layer, means for a spreading heat in directions substantially...
US-9,741,618 Methods of forming semiconductor devices
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within...
US-9,741,601 Semiconductor component with regions electrically insulated from one another and method for making a...
Semiconductor component comprising at least two semiconductor regions are disclosed. In one embodiment the semiconductor regions of the semiconductor component...
US-9,741,571 Bipolar transistor device with an emitter having two types of emitter regions
Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first...
US-9,741,570 Method of manufacturing a reverse-blocking IGBT
A method of manufacturing a reverse-blocking IGBT (insulated gate bipolar transistor) includes forming a plurality of IGBT cells in a device region of a...
US-9,740,837 Apparatus and method for preventing cloning of code
An apparatus and corresponding method for preventing cloning of code. The apparatus includes a memory, an authentication module, and a device. The memory is...
US-9,739,640 Rotation angle sensor system and method
Rotational angle sensor systems and methods are provided for detecting an angular position of a movable structure. A system may include a movable structure, a...
US-9,735,992 Receiver and method for receiving a signal
A receiver may receive a pulse width encoded signal. The receiver may determine a position of a transition of a pulse of the pulse width encoded signal by...
US-9,735,795 Analog-to-digital converter arrangement
An analog-to-digital converter arrangement may include an analog amplifier with variable gain; an analog-to-digital converter; a digital reconstruction element...
US-9,735,718 Alternator control with temperature-dependent safety feature
A method for controlling an alternator includes determining a temperature-dependent value associated with a battery coupled to an alternator and determining an...
US-9,735,716 Multi-phase machine current control
A controller for controlling a multi-phase motor is described. The controller may be configured to drive a first virtual multi-phase motor in an active mode and...
US-9,735,673 Burst-mode operation of a switching converter
In accordance with an embodiment, a method of driving a switching element in a switching converter includes generating a feedback signal that is dependent on...
US-9,735,661 Mixed-mode power factor correction
A controller for controlling a power converter is described. The controller may be configured determine a parameter value associated with the power converter,...
US-9,735,264 Semiconductor switch with integrated temperature sensor
A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in...
US-9,735,243 Semiconductor device, integrated circuit and method of forming a semiconductor device
A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain...
US-9,735,241 Semiconductor device with a field plate double trench having a thick bottom dielectric
Disclosed is a power device, such as power MOSFET, and method for fabricating same. The device includes an upper trench situated over a lower trench, where the...
US-9,735,141 Compound semiconductor transistor with gate overvoltage protection
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound...
US-9,735,126 Solder alloys and arrangements
A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the...
US-9,735,086 Power semiconductor module having a two-part housing
A power semiconductor module includes a substrate having a first side for being arranged to face a heat sink and for being thermally conductively connected to...
US-9,735,078 Device including multiple semiconductor chips and multiple carriers
A device includes a first semiconductor chip that is arranged over a first carrier and includes a first electrical contact. The device further includes a second...
US-9,734,445 Electronic document with two antennas
In various embodiments, a circuit arrangement is provided, including a first antenna tuned to a first frequency range, a second antenna tuned to a second...
US-9,733,365 Gamma ray detector and method of detecting gamma rays
In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma...
US-9,733,280 Balancing an eddy current effect and a skin effect on a magnetic sensor using die paddle notches
A magnetic current sensor may include a first sensing element, a second sensing element, and a die paddle. The die paddle may include a first edge and a second...
US-9,733,279 Magnetic field current sensors
Embodiments related to magnetic current sensors, systems and methods. In an embodiment, a magnetic current sensor integrated in an integrated circuit (IC) and...
US-9,733,107 XMR angle sensors
Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range...
US-9,728,529 Semiconductor device with electrostatic discharge protection structure
A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device...
US-9,728,512 Electro static discharge clamping device
Electrostatic discharge clamp devices are described. In one embodiment, the semiconductor device includes a first transistor, the first transistor including a...
US-9,728,395 Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of...
A method for manufacturing a substrate wafer 100 includes providing a device wafer (110) having a first side (111) and a second side (112); subjecting the...
US-9,723,716 Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
According to various embodiments, a contact pad structure may be provided, the contact pad structure may include: a dielectric layer structure; at least one...
US-9,722,659 Frequency ramp generation
A method for generating a digital frequency ramp signal including a sequence of frequency ramps is disclosed herein. In accordance with one embodiment of the...
US-9,721,161 Dynamic adjustment of imaging parameters
Representative implementations of devices and techniques provide adjustable parameters for imaging devices and systems. Dynamic adjustments to one or more...
US-9,718,678 Package arrangement, a package, and a method of manufacturing a package arrangement
According to various embodiments, a package arrangement may include: a first encapsulation material; at least one electronic circuit at least partially embedded...
US-9,714,988 Hall effect sensor with graphene detection layer
A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called "full 3-d" Hall sensor,...
US-9,708,182 Methods for producing a cavity within a semiconductor substrate
A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor...
US-9,708,180 MEMS device with polymer layer, system of a MEMS device with a polymer layer, method of making a MEMS device...
A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS...
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