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Patent # Description
US-9,443,795 Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a multi-phase inverter situated on a leadframe. The PQFN package...
US-9,443,787 Electronic component and method
An electronic component includes a high-voltage depletion-mode transistor, a low-voltage enhancement-mode transistor arranged adjacent and spaced apart from the...
US-9,443,760 Multichip power semiconductor device
An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted...
US-9,443,583 Resistive memory and method
A memory device includes a multi gate field effect transistor (MuGFET) having a fin with a contact area. A programmable memory element abuts the fin contact area.
US-9,442,478 Systems, circuits and a method for generating a configurable feedback
A system can generate a configurable feedback. The system includes a number of circuitries that are coupled to a number of drivers and connected to each other...
US-9,439,017 Method for manufacturing a plurality of microphone structures, microphone and mobile device
In various embodiments, a method for manufacturing microphone structures is provided. The method may include: Providing a substrate having a front side and a...
US-9,438,979 MEMS sensor structure for sensing pressure waves and a change in ambient pressure
A sensor structure, including: a first diaphragm structure, an electrode element, and a second diaphragm structure arranged on an opposite side of the electrode...
US-9,438,452 System and method for multi-channel control system
A system having has a pulse width modulation controller to successively activate each of a plurality of channels each in its own individual channel time slot is...
US-9,438,221 Switch device
Switch devices with a first switching path and a second switching path are provided in some embodiments. When a voltage drop across the first switching path...
US-9,438,117 Current balancing in a multi-phase power supply
According to example configurations herein, a controller is operated in a control mode (such as a high-speed control mode) in which the controller controls...
US-9,438,112 Power converter including integrated driver for depletion mode group III-V transistor
In one implementation, a power converter includes an output stage integrated circuit (IC) on a group III-V die, and a driver IC for driving the output stage IC,...
US-9,437,687 III-nitride based semiconductor structure
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor...
US-9,437,686 Gallium nitride devices with discontinuously graded transition layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor...
US-9,437,685 Group III-V device with a selectively reduced impurity concentration
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body...
US-9,437,653 Stress sensing devices and methods
Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can...
US-9,437,593 Silicided semiconductor structure and method of forming the same
A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the...
US-9,437,589 Protection devices
In accordance with an embodiment of the present invention, a semiconductor package includes a die paddle and a protection device disposed over the die paddle....
US-9,437,570 Power converter package with an integrated output inductor
In one implementation, a power semiconductor package includes a conductive carrier including a switch node segment and a power output segment. The power...
US-9,437,548 Chip package and method for manufacturing the same
Various embodiments provide a chip package. The chip package may include a metallic chip carrier; at least one chip carried by the metallic chip carrier;...
US-9,437,516 Chip-embedded packages with backside die connection
A semiconductor package includes a semiconductor die and a metal clip. In one embodiment, the semiconductor die is embedded in an insulating material and has a...
US-9,437,513 Electrically insulating thermal interface on the discontinuity of an encapsulation structure
Method for manufacturing an electronic semiconductor package, in which method an electronic chip (100) is coupled to a carrier, the electronic chip is at least...
US-9,437,458 Method of electrically isolating leads of a lead frame strip
A lead frame strip includes a plurality of connected unit lead frames, each unit lead frame having a die paddle and a plurality of leads connected to a...
US-9,437,440 Method for manufacturing a semiconductor device
A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas...
US-9,436,190 Sensor circuit for detecting the setting of an integrated circuit
Methods and apparatus selecting settings for circuits according to various aspects of the present invention may operate in conjunction with a measurement...
US-9,435,849 Method for testing semiconductor dies and a test apparatus
A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a...
US-9,435,825 Multi-channel probe plate for semiconductor package test systems
A test apparatus includes a multi-channel probe plate having an electrically insulating body with opposing first and second main surfaces, and a plurality of...
US-9,435,662 Magneto-resistive angle sensor and sensor system using the same
A magneto-resistive angle sensor includes a first half bridge circuit including a first magneto-resistive element and a second magneto-resistive element, and a...
US-9,435,631 Discrete magnetic angle sensor device, a magnetic angle sensor arrangement, a method for generating an angle...
A discrete magnetic angle sensor device according to an embodiment includes a first magnetic field gradiometer and a second magnetic field gradiometer. The...
US-9,434,298 Direction indicator circuit for controlling a direction indicator in a vehicle
In various embodiments, a direction indicator circuit for controlling a direction indicator in a vehicle is provided. The direction indicator circuit may...
US-9,433,962 Application of fluids to substrates
Various embodiments relate to application of a fluid to a substrate. The fluid is locally heated, for example, to obtain a desired thickness profile.
US-9,432,759 Surface mountable microphone package, a microphone arrangement, a mobile phone and a method for recording...
A surface mountable microphone package comprises a first microphone and a second microphone. Furthermore, the surface mountable microphone package comprises a...
US-9,432,014 Circuit arrangement for preventing high current flow during energy-saving mode
In accordance with one embodiment, a circuit arrangement is provided including a circuit having a first terminal for a first supply potential and a second...
US-9,431,554 Semiconductor light trap device
Buried structures for silicon devices which alter light paths and thereby form light traps. The lights traps couple more light to a photosensitive surface of...
US-9,431,551 Circuit arrangement and method of forming a circuit arrangement
A circuit arrangement may be provided. The circuit arrangement may include a semiconductor substrate including a first surface, a second surface opposite the...
US-9,431,499 Method of manufacturing a stress-controlled HEMT
A method of manufacturing a semiconductor device includes providing a heterostructure body with a first doped region, a second doped region spaced apart from...
US-9,431,490 Power semiconductor device and method
A power semiconductor device includes a semiconductor body having a first side, a second side opposite the first side and an outer rim. The semiconductor body...
US-9,431,484 Vertical transistor with improved robustness
A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A...
US-9,431,398 Semiconductor chip having a circuit with cross-coupled transistors to thwart reverse engineering
According to one embodiment, a chip has a circuit with at least one p channel field effect transistor (FET); at least one n channel FET; a first and a second...
US-9,431,394 Power semiconductor package with gate and field electrode leads
A power semiconductor package includes a housing, a semiconductor chip embedded in the housing, and at least four terminals partially embedded in the housing...
US-9,431,392 Electronic circuit having adjustable transistor device
A transistor device includes at least one first type transistor cell including a drift region, a source region, a body region arranged between the source region...
US-9,431,382 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor...
Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a...
US-9,431,379 Signal transmission arrangement
A signal transmission arrangement is disclosed. A voltage converter includes a signal transmission arrangement.
US-9,431,353 Method for manufacturing a digital circuit and digital circuit
A method for manufacturing a digital circuit is described comprising forming two field effect transistors, connecting the field effect transistors such that an...
US-9,429,616 Test method and test arrangement
A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least...
US-9,429,605 Techniques for determining a resistance value
Some embodiments relate to an integrated circuit (IC). The IC determines a time-variant resistance of an sensing resistor, wherein a resistance of the sensing...
US-9,429,598 Current measurement and control of a semiconductor element based on the current measurement in a power...
A semiconductor arrangement may include a multiplicity of semiconductor elements with controlling paths and controlled paths, the controlled paths having...
US-9,428,381 Devices with thinned wafer
Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer,...
US-9,426,005 Method for indirect measurement of the phase delay of a RF-PWM modulator
A delay measurement system to measure a phase delay of a Radio Frequency-Pulse Width Modulated (RF-PWM) signal introduced in a Radio Frequency-Pulse Width...
US-9,425,788 Current sensors and methods of improving accuracy thereof
A method for operating a circuit includes providing a three terminal main transistor and a four terminal sense transistor having a field plate. The method...
US-9,425,784 Circuit having a power transistor and a drive circuit
A circuit having a power transistor and drive circuit is disclosed. One embodiment provides a drive terminal and a load path. The power transistor is integrated...
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