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| Patent # | Description |
|---|---|
| US-1,035,5610 |
LLC power converter and switching method thereof A method includes turning off a high-side switch of an inductor-inductor-capacitor (LLC) power converter; detecting a first current pulse at a gate of a... |
| US-1,035,5197 |
Integrated circuit including sensor having injection molded magnetic
materials having different magnetic remanences An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor. |
| US-1,035,5126 |
Semiconductor devices and method for manufacturing semiconductor devices A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending... |
| US-1,035,5116 |
Power semiconductor device A power semiconductor device includes: a semiconductor body coupled to a first load terminal and a second load terminal, and includes: a first doped region of a... |
| US-1,035,5087 |
Semiconductor device including a transistor with a gate dielectric having
a variable thickness A semiconductor device includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a... |
| US-1,035,4992 |
Semiconductor devices and methods for forming a semiconductor device A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the... |
| US-1,035,4943 |
Multi-branch terminal for integrated circuit (IC) package An example multi-branch terminal for an integrated circuit (IC) package is described herein. An example multi-branch terminal of an integrated circuit (IC), may... |
| US-1,035,4925 |
Semiconductor device including at least one lateral IGFET and at least one
vertical IGFET and corresponding... A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, first trenches and second... |
| US-1,035,4917 |
Method for manufacturing etch stop areas for contacting semiconductor
devices A method for manufacturing includes providing a semiconductor substrate having a semiconductor device including at least two device layers to be contacted. A... |
| US-1,035,4911 |
Silicon on nothing devices and methods of formation thereof In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The... |
| US-1,035,4065 |
Method for protecting data and data processing device According to one embodiment, a method for protecting data is provided comprising receiving a plurality of data symbols, determining a sequence of checksum... |
| US-1,035,3018 |
Highly efficient diagnostic methods for monolithic sensor systems Embodiments relate to integrated circuit (IC) sensors and more particularly to IC sensor diagnostics using multiple (e.g., redundant) communication signal... |
| US-1,035,2910 |
Gas analyzer A gas analyzer is provided. The gas analyzer may include: a tubular housing having a housing wall extending along an axial direction of the tubular housing and... |
| US-1,035,2812 |
Circuits, methods, and computer programs to detect mechanical stress and
to monitor a system A circuit, a method, and a computer program configured to detect mechanical stress and a circuit, a method, and a computer program configured to monitor safety... |
| US-D853,978 |
High-performance semiconductor module |
| US-1,034,8430 |
Synchronization mechanism for high speed sensor interface A sensor may determine a sampling pattern based on a group of synchronization signals received by the sensor. The sampling pattern may identify an expected time... |
| US-1,034,8417 |
Short pulse width modulation (PWM) code (SPC) / single edge nibble
transmission (SENT) sensors with increased... A sensor system with a sensor device communicatively coupled to a sensor bus to a receiver circuitry or processing component increases the data rate of sensor... |
| US-1,034,7737 |
Heterojunction bipolar transistor fully self-aligned to diffusion region
with strongly minimized substrate... Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a... |
| US-1,034,7723 |
Method of manufacturing a semiconductor device having graphene material A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first... |
| US-1,033,8625 |
Voltage regulation system and method for providing power to a load A voltage regulation system for providing power to a load is provided. The voltage regulation system includes a voltage regulator operable to: set an operating... |
| US-1,033,6607 |
Membrane components and method for forming a membrane component A membrane component comprises a membrane structure comprising an electrically conductive membrane layer. The electrically conductive membrane layer has a... |
| US-1,033,3578 |
Device including a switching unit and applications thereof A device includes a switching unit including N input ports and M output ports, wherein N.gtoreq.M.gtoreq.2. The switching unit is configured to selectively... |
| US-1,033,3407 |
Power stage packages of a multi-phase DC-DC converter under a coupled
inductor A multi-phase DC-DC converter includes a substrate having opposing first and second sides, a plurality of power stage packages attached to the first side of the... |
| US-1,033,3387 |
Electric assembly including a semiconductor switching device and a
clamping diode An electric assembly includes a semiconductor switching device with a maximum breakdown voltage rating across two load terminals in an off-state. A clamping... |
| US-1,033,2973 |
N-channel bipolar power semiconductor device with p-layer in the drift
volume A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region... |
| US-1,033,1036 |
Exposure mask, exposure apparatus and method for calibrating an exposure
apparatus In various embodiments, an exposure mask may include a carrier, a first exposure structure in a first structure plane of the carrier, and a second exposure... |
| US-1,032,6009 |
Power semiconductor transistor having fully depleted channel region A power semiconductor transistor includes a trench extending into a semiconductor body along a vertical direction and having first and second trench sidewalls... |
| US-1,032,1533 |
Driving several light sources A device for driving several light sources is provided, wherein the several light sources are arranged in a matrix structure; wherein the several light sources... |
| US-1,031,3570 |
Dynamic conservation of imaging power Representative implementations of devices and techniques provide adaptable settings for imaging devices and systems. Operating modes may be defined based on... |
| US-1,031,1955 |
Resistive memory transition monitoring A method for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The method includes... |
| US-1,030,5610 |
Phase and amplitude signal sensing circuit for radio frequency (RF)
transmitters A radio frequency (RF) transmitter for self-sensing power and phase of an RF signal is provided. A local oscillator (LO) is configured to generate a LO signal.... |
| US-1,030,5506 |
Pad asymmetry compensation A modulator including a delta-sigma modulation circuit having an order greater than 1, and configured to modulate an input signal into a Pulse Density Modulated... |
| US-1,030,5473 |
Control circuitry for controlling a set of switches In some examples, a device includes a set of switches configured to deliver current to an output node of the device, wherein the set of switches includes a... |
| US-1,030,5377 |
Digital controller for switched capacitor DC-DC converter Representative implementations of devices and techniques may minimize switching losses and voltage ripple in a switched capacitor de-de converter. A digital... |
| US-1,030,5293 |
Battery management system A device comprises a control entity configured to monitor an operation parameter of at least one battery cell of a battery. The device further comprises an... |
| US-1,030,4953 |
Semiconductor device with stripe-shaped trench gate structures, transistor
mesas and diode mesas A semiconductor device includes stripe-shaped trench gate structures that extend in a semiconductor body along a first horizontal direction. Transistor mesas... |
| US-1,030,4952 |
Power semiconductor device with dV/dt controllability and cross-trench
arrangement A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active... |
| US-1,030,4935 |
Semiconductor device having a trench gate electrode A semiconductor device includes a semiconductor substrate comprising a main surface and a gate electrode in a trench between neighboring semiconductor mesas.... |
| US-1,030,4923 |
Method of forming a vertical potential short in a periphery region of a
III-nitride stack for preventing... A method of manufacturing a semiconductor die includes forming a semiconductor body on a substrate. The semiconductor body has a periphery which is devoid of... |
| US-1,030,4795 |
Semiconductor device including antistatic die attach material A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The... |
| US-1,030,4789 |
LDMOS transistor structure and method of manufacture In an embodiment, a method includes forming a first opening in a front surface of a semiconductor substrate including a LDMOS transistor structure, and covering... |
| US-1,030,4782 |
Compressive interlayer having a defined crack-stop edge extension A semiconductor device includes a substrate, a structured interlayer on the substrate and having defined edges, and a structured metallization on the structured... |
| US-1,030,4780 |
Device having substrate with conductive pillars A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up... |
| US-1,030,4751 |
Electronic sub-module including a leadframe and a semiconductor chip
disposed on the leadframe An electronic sub-module includes a leadframe, a semiconductor chip disposed on the leadframe and an encapsulation material disposed on the leadframe and on the... |
| US-1,030,3638 |
Method of data acquisition and apparatus for data acquisition Disclosed herein are techniques including a method for data acquisition in a system having a plurality of data acquisition units and a controller coupled to the... |
| US-1,030,3386 |
Data processing device and method for saving power in a data processing
device According to one embodiment, a data processing device is described including a non-volatile memory configured to store configuration data for the data... |
| US-1,030,2599 |
Photoacoustic gas detector A photoacoustic gas detector may include: a gas chamber configured to receive a gas to be analyzed therein, an excitation element configured to selectively... |
| US-1,029,8271 |
Method and apparatus for providing a joint error correction code for a
combined data frame comprising first... An apparatus (100) for providing an joint error correction code (140) for a combined data frame (254) comprising first data (112) of a first data channel and... |
| US-1,029,8251 |
Electronic switching and protection circuit An embodiment electronic circuit includes an electronic switch comprising a load path, a first protection circuit configured to generate a first protection... |
| US-1,029,8221 |
Adaptive leading-edge blanking In some examples, a control circuit is configured to control a transistor, and the control circuit includes a leading-edge detection unit configured to detect a... |
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