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| Patent # | Description |
|---|---|
| US-9,948,876 |
Charge conservation in pixels Representative implementations of devices and techniques provide conservation of charge in a pixel. Charge in the pixel may be alternately stored in a first... |
| US-9,948,409 |
Phase and amplitude signal sensing circuit for radio frequency (RF)
transmitters A radio frequency (RF) transmitter for self-sensing power and phase of an RF signal is provided. A local oscillator (LO) is configured to generate a LO signal.... |
| US-9,948,289 |
System and method for a gate driver In accordance with an embodiment, method of controlling a switching transistor includes applying a first voltage to a first node of a switchable tank circuit,... |
| US-9,948,187 |
System and method for a switched-mode power supply In accordance with an embodiment, a method of operating a switched-mode power supply includes turning on a semiconductor switch coupled to a primary winding of... |
| US-9,947,985 |
System and method for a directional coupler In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an... |
| US-9,947,760 |
Method for manufacturing an emitter for high-speed heterojunction bipolar
transistors A method for manufacturing a bipolar junction transistor is provided. A layer stack is provided that comprises a semiconductor substrate having a trench... |
| US-9,947,741 |
Field-effect semiconductor device having pillar regions of different
conductivity type arranged in an active area In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are... |
| US-9,947,648 |
Semiconductor device including a diode at least partly arranged in a
trench A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including... |
| US-9,947,600 |
Semiconductor structure having a test structure formed in a group III
nitride layer In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or... |
| US-9,946,674 |
Scalable multi-core system-on-chip architecture on multiple dice for high
end microcontroller A system for a multiple chip architecture that enables different system on-chip (SoC) systems with varying compatibilities to interact as one SoC via a... |
| US-9,945,899 |
Testing of semiconductor devices and devices, and designs thereof In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a... |
| US-9,945,884 |
System and method for a wind speed meter According to an embodiment, a method of measuring wind speed includes measuring atmospheric pressure at a first pressure sensor arranged inside a case and... |
| US-9,945,746 |
Motion detection using pressure sensing According to an embodiment, a method of sensing motion includes receiving a first signal from a first pressure sensor and a second signal from a second pressure... |
| US-9,943,228 |
Functional skin patch A functional skin patch having a first surface and a second surface opposite the first surface is provided. The functional skin patch includes a functional unit... |
| US-9,942,677 |
System and method for a transducer According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal... |
| US-9,942,655 |
Sound processing Embodiments of the present invention provide a socket that comprises a socket body. The socket body forms a socket cavity for receiving a plug. The socket... |
| US-9,941,911 |
Mixing stage, modulator circuit and a current control circuit A mixing stage includes a first modulation stage that receives an input signal from a first common node of the mixing stage, a first local oscillator input that... |
| US-9,941,909 |
Multiple input and multiple output switch networks According to an embodiment, a circuit package includes a programmable switch component having a plurality of input terminals arranged on the programmable switch... |
| US-9,941,908 |
System and method for a radio frequency filter In accordance with an embodiment, a circuit includes a plurality of filter circuits having a first port, a second port and a third port, where a second port of... |
| US-9,941,798 |
Switched-mode power conversion In accordance with an embodiment, a method of operating a switched-mode power converter includes defining at least one of a minimum switching frequency... |
| US-9,941,789 |
Feedforward circuit for DC-to-DC converters with digital voltage control
loop A method may comprise receiving a first clock signal; receiving a digital duty cycle value; using the first clock signal and digital duty cycle value to... |
| US-9,941,726 |
Protection and management of a power supply output shorted to ground In some examples, a circuit is configured to receive an input signal and deliver, based on the input signal, a charging current to a capacitor. The circuit may... |
| US-9,941,432 |
Semiconductor devices, a fluid sensor and a method for forming a
semiconductor device A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first... |
| US-9,941,403 |
Semiconductor device and method for manufacturing a semiconductor device A semiconductor device includes a transistor including a source region, a drain region, and a gate electrode. The gate electrode is disposed in a first trench... |
| US-9,941,402 |
Semiconductor devices and methods for forming a semiconductor device A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure... |
| US-9,941,375 |
Method for manufacturing a semiconductor device having silicide layers A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The... |
| US-9,941,365 |
Method for forming a stress-reduced field-effect semiconductor device A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining... |
| US-9,941,354 |
Semiconductor device comprising a first gate trench and a second gate
trench A semiconductor device includes a first gate trench and a second gate trench in a first main surface of a semiconductor substrate. A mesa is arranged between... |
| US-9,941,349 |
Superjunction semiconductor device with oppositely doped semiconductor
regions formed in trenches A trench etch mask is formed on a process surface of a semiconductor layer. By using the trench etch mask, both first trenches and second trenches are formed... |
| US-9,941,276 |
Method of producing a semiconductor component arrangement comprising a
trench transistor A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body... |
| US-9,941,274 |
Semiconductor device with a switchable and a non-switchable diode region A semiconductor device includes at least one IGBT cell region, at least one switchable free-wheeling diode region, and at least one non-switchable free-wheeling... |
| US-9,941,272 |
Method of producing a semiconductor device A semiconductor body has a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer... |
| US-9,941,229 |
Device including semiconductor chips and method for producing such device A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a... |
| US-9,941,193 |
Semiconductor device package having solder-mounted conductive clip on
leadframe A conductive clip for a semiconductor device package. In one example, the conductive clip may include a number of protrusions that extend from a surface of the... |
| US-9,941,181 |
Chip package and method of forming a chip package In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically... |
| US-9,941,111 |
Method for processing a semiconductor layer, method for processing a
silicon substrate, and method for... According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma... |
| US-9,941,000 |
Memory unit and method of operating a memory unit sector Disclosed is a memory unit that includes a sector of memory cells. The sector includes a first memory cell configured to selectively take on a state... |
| US-9,939,410 |
Transmission of information associated with a possible sensor fault of a
magnetic sensor A magnetic sensor may sense a magnetic field during a rotation of a wheel. The sensed magnetic field may represent a profile of the wheel during the rotation.... |
| US-9,939,331 |
System and method for a capacitive thermometer Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is... |
| US-9,938,141 |
Semiconductor element and methods for manufacturing the same A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor... |
| US-9,938,140 |
MEMS device and method of manufacturing a MEMS device A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a... |
| US-9,938,135 |
Stress decoupled piezoresistive relative pressure sensor and method for
manufacturing the same Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises... |
| US-9,938,133 |
System and method for a comb-drive MEMS device According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the... |
| US-9,936,552 |
System having a driver with voltage supply using an auxiliary winding of a
transformer In one example, a system includes a controller, a transformer including at least a primary winding and an auxiliary winding, a voltage supply, and a driver. The... |
| US-9,936,304 |
Digital silicon microphone with configurable sensitivity, frequency
response and noise transfer function In some embodiments, a microphone system includes a multi-bit delta-sigma modulator configured to be coupled to a microphone and configured to covert an output... |
| US-9,935,623 |
Method and apparatus for providing an adjustable high resolution dead time The disclosure generally relates to a method and an apparatus for providing an adjustable high resolution dead time, and more specifically, to a method and an... |
| US-9,935,547 |
System and method for a switched-mode power supply In accordance with an embodiment, a method of operating a switched-mode power includes turning on an output switch of the switched-mode power converter coupled... |
| US-9,935,367 |
System and method for a beamformer In accordance with an embodiment a beamforming circuit having a radio frequency (RF) front end and a plurality of beamforming delay circuits coupled to the RF... |
| US-9,935,259 |
Hall effect device A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a... |
| US-9,935,126 |
Method of forming a semiconductor substrate with buried cavities and
dielectric support structures A method of forming a semiconductor device includes forming a plurality of trenches extending into a semiconductor substrate from a first surface of the... |
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