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| Patent # | Description |
|---|---|
| US-1,015,3766 |
Switch device A device is provided that includes a switch within a package. A first electrical connection is provided between a load terminal of the switch and first pin of... |
| US-1,015,3764 |
Current measurement in a power semiconductor device A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load... |
| US-1,015,3762 |
Method for controlling a semiconductor component A transistor monolithically integrated in a semiconductor body includes a first sub-transistor and a second sub-transistor that both include a first and second... |
| US-1,015,3702 |
Switched-mode power supply controller using a single pin for both input
voltage sensing and control of power... Circuits and methods within a switched-mode power supply (SMPS) controller are provided. The SMPS controller includes an SMPS power stage which is integrated... |
| US-1,015,3697 |
Multiphase power supply and failure mode protection A multi-phase power supply circuit includes multiple phases to convert an input voltage into a respective output voltage to power a load. A first phase of the... |
| US-1,015,3362 |
Semiconductor device In an embodiment, a semiconductor device includes an enhancement mode Group III-nitride-based High Electron Mobility Transistor (HEMT) including a drain, a... |
| US-1,015,3339 |
Semiconductor device and method for forming a semiconductor device A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a... |
| US-1,015,3276 |
Group III heterojunction semiconductor device having silicon
carbide-containing lateral diode In an embodiment, a semiconductor device includes a silicon carbide layer comprising a lateral diode, and a Group III nitride based semiconductor device... |
| US-1,015,3275 |
Method of operating an IGBT having switchable and non-switchable diode
cells A method of operating an IGBT is described. The IGBT has gate, emitter and collector terminals, and IGBT cells, switchable diode cells, and non-switchable diode... |
| US-1,015,3266 |
Semiconductor device According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at... |
| US-1,015,1826 |
Radar employing preacquisition ramps Techniques for radar detection based on preacquisition ramps are discussed. One example system comprises transmitter circuitry, receiver circuitry, and one or... |
| US-1,015,0674 |
Process for the formation of a graphene membrane component, graphene
membrane component, microphone and... A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface... |
| US-1,014,9361 |
Driver for light emitting devices using sequential coupling A method includes sequentially coupling, by a switching module of a circuit, each cell of a plurality of cells to a driver module. Each cell of the plurality of... |
| US-1,014,8260 |
Pulse-density modulated fast current controller Methods, devices, techniques, and circuits are disclosed for fast current control of a buck converter. In one example, a device includes a pulse density... |
| US-1,014,8175 |
System and method for a switched-mode power supply In accordance with an embodiment, a method of operating a switched-mode power converter includes measuring an input voltage of the switched-mode power... |
| US-1,014,8169 |
Bridgeless flyback converter circuit and method of operating thereof A circuit includes a bridgeless flyback converter having a primary side electromagnetically coupled to a secondary side by a transformer, the primary side being... |
| US-1,014,7786 |
Power semiconductor device with charge balance design A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the... |
| US-1,014,7703 |
Semiconductor package for multiphase circuitry device In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from... |
| US-1,014,7657 |
Semiconductor devices and a method of detecting a crack A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor... |
| US-1,014,6655 |
Method for determining an intergrity of an execution of a code fragment
and a method for providing an... A method for determining an integrity of an execution of a code fragment is provided. The method includes identifying a reference signature for the code... |
| US-1,014,5938 |
Power sensor for integrated circuits An on-chip power sensor and a millimeter-wave transmitter on a chip including the on-chip power sensor are described. The millimeter-wave transmitter can also... |
| US-1,014,5882 |
Sensor self-diagnostics using multiple signal paths Embodiments relate to systems and methods for sensor self-diagnostics using multiple signal paths. In an embodiment, the sensors are magnetic field sensors, and... |
| US-1,014,3099 |
Semiconductor module with gripping sockets, methods for gripping, for
moving and for electrically testing a... One aspect of the invention relates to a semiconductor module with an outer housing having four side walls, and a circuit carrier, which is mounted on the outer... |
| US-1,014,2846 |
Relay attack prevention Embodiments related to transmission of data packets are described and depicted. |
| US-1,014,2572 |
Imaging apparatus and imaging method for capturing imaging data via a
pixel array The present disclosure relates to an imaging apparatus. The imaging apparatus comprises a pixel array. The pixel array comprises a first pixel comprising a... |
| US-1,014,2124 |
System and method to transmit data over a bus system A system includes a bus system to connect a number of components in a chain-like structure. A first control device (e.g., microcontroller or microprocessor) is... |
| US-1,014,1415 |
Combined gate and source trench formation and related structure A semiconductor device includes a gate trench in a semiconductor substrate, a source trench in the semiconductor substrate, the source trench having a first... |
| US-1,014,1404 |
Power semiconductor device having fully depleted channel region A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, first and second cells electrically connected... |
| US-1,014,1199 |
Selecting a substrate to be soldered to a carrier A method for soldering an insulating substrate onto a substrate mounting portion of a carrier by a predefined solder is provided. The insulating substrate... |
| US-1,013,8115 |
Low profile transducer module A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid... |
| US-D834,545 |
Semiconductor module |
| US-D834,544 |
Semiconductor module |
| US-1,013,5634 |
Bus interface with bi-directional, one-wire communication and individual
select lines A system may include a plurality of slave devices connected to a master device via a bus interface that includes a communication line and a plurality of select... |
| US-1,013,5483 |
Transmitter/receiver module for millimeter wave 5G MIMO communication
systems A transmit/receive module includes an integrated control circuit. The integrated control circuit includes an RFIC input terminal, multiple pairs of I/O... |
| US-1,013,5468 |
Decoder and method for physically unclonable functions using threshold
decoding A decoder includes a feedback shift register having a plurality of register elements that implement a simplex code and take a register vector for determining an... |
| US-1,013,5452 |
Digital frequency synthesizer with robust injection locked divider The disclosure is directed to a frequency synthesizer circuit including digitally controlled oscillator (DCO) and an injection locked digitally controlled... |
| US-1,013,5348 |
LLC power converter and switching method thereof In some embodiments, an inductor-inductor-capacitor (LLC) converter includes a transformer having a primary winding, a secondary winding, and an auxiliary... |
| US-1,013,5346 |
Power supply regulation and bidirectional flow mode A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. The power converter circuit uses energy... |
| US-1,013,5345 |
Current sensing in an electromagnetic component using an auxiliary winding
stub Many electronic devices, such as voltage converters, motors, etc., include electromagnetic components through which the current flow must be estimated. Such... |
| US-1,013,5335 |
Powerstage attached to inductor In some examples, a device comprises an inductor and a package comprising at least one power device. The package is attached to the inductor by an adhesion... |
| US-1,013,5272 |
Switched mode power supply circuit A switched mode power supply circuit includes a switching converter receiving an input voltage and generating an output voltage from the input voltage in... |
| US-1,013,4885 |
Semiconductor device having an active trench and a body trench A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main... |
| US-1,013,4853 |
Method of manufacturing a semiconductor device having an impurity
concentration A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body,... |
| US-1,013,4848 |
Semiconductor device having a graphene layer, and method of manufacturing
thereof A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide... |
| US-1,013,4845 |
Method and power semiconductor device having an insulating region arranged
in an edge termination region A power semiconductor device includes a semiconductor body having first and second opposing sides and an edge termination region arranged between an active... |
| US-1,013,4835 |
Power semiconductor device having fully depleted channel regions A power semiconductor device is disclosed. The device includes a semiconductor body coupled to a first load terminal structure and a second load terminal... |
| US-1,013,4697 |
Semiconductor chip and method of processing a semiconductor chip Various embodiments provide a semiconductor chip, wherein the semiconductor chip comprises a first contact area and a second contact area both formed at a... |
| US-1,013,4654 |
Double-encapsulated power semiconductor module and method for producing
the same One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. The... |
| US-1,013,4636 |
Methods for producing semiconductor devices A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first... |
| US-1,013,4603 |
Method of planarising a surface In an embodiment, a method of planarizing a surface includes applying a first layer to a surface including a protruding region including at least one compound... |
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